MMBT8550C Specs and Replacement
Type Designator: MMBT8550C
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT23
MMBT8550C Substitution
MMBT8550C detailed specifications
mmbt8550c mmbt8550d.pdf
MMBT8550(1.5A) PNP Silicon Epitaxial Planar Transistor For switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. As complementary type the NPN transistor MMBT8050 (1.5A) is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package O Absolute Maximum Ratings (T = 25 C) a Parameter Symbol Value Unit Collector Bas... See More ⇒
mmbt8550c mmbt8550d.pdf
MMBT8550C/D Features For switching and amplifier applications Especially suitable for AF-Driver stages and low power output stages As complementary type of the NPN transistor MMBT8050C/D is recommended Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 25 V Emitter Base V... See More ⇒
mmbt8550c mmbt8550d.pdf
MMBT8550-1.5A PNP Transistor Features SOT-23 (TO-236) For Switching and Amplifier Applications. Especially Suitable for AF-Driver Stages and Low Power Output Stages. As Complementary Type of the NPN Transistor MMBT8050-1.5A is Recommended. 1.Base 2.Emitter 3.Collector Marking -C X2 -D Y2 Absolute Maximum Ratings Ratings at 25 ambient temperature unless other... See More ⇒
mmbt8550.pdf
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Detailed specifications: 2SA1774Q , 2SA1774R , 2SA1774S , MMBT3904C , MMBT3906M , BCX56SQ-10 , BCX56SQ-16 , MMBT8050C , TIP2955 , MMBT8550D , MMBT2045 , 2N5401U , 2N5551U , 2SB772U-R , 2SB772U-Q , 2SB772U-P , 2SB772U-E .
History: MMBT5910
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