2SD882U-E Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD882U-E

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 90 MHz

Capacitancia de salida (Cc): 45 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT89

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2SD882U-E datasheet

 6.1. Size:297K  semtech
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2SD882U-E

ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 120 V Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCES 100 V Collector Emitter Voltage VCEO Emitter Base Voltage VEBO 6 V Collector

 6.2. Size:210K  inchange semiconductor
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2SD882U-E

isc Silicon NPN Power Transistor 2SD882U-P DESCRIPTION High Collector Current-I = 3.0A C Low Saturation Voltage - V = 0.8V(Max)@ I = 2.0A, I = 0.2A CE(sat) C B Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design for used in medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(T

 7.1. Size:535K  semtech
 st2sd882u.pdf pdf_icon

2SD882U-E

ST 2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Peak Collector Current (t = 350 s) ICP 7 A T

 7.2. Size:222K  cn cbi
 2sd882u.pdf pdf_icon

2SD882U-E

2SD882U NPN Silicon Power Transistor The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A Peak Collector Current (t = 10 ms) ICP 7 A O T

MOSTRAR MÁS

Otros transistores... 2N5551U, 2SB772U-R, 2SB772U-Q, 2SB772U-P, 2SB772U-E, 2SD882U-R, 2SD882U-Q, 2SD882UP, 2SC828, BC846DW, BC847DW-A, BC847DW-B, BC847DW-C, BC856DW, BC857DW, MMBT5451DW, MMBTSA1576W-Q