MMBTSC3356-Q. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

MMBTSC3356-Q datasheet

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MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 20 V Collector Emitter Voltage VCEO 12 V Emitter Base V

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MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. 1.Base 2.Emitter 3.Collector HFE MARKING SOT-23 Plastic Package Q R23 R R24 S R25 O Absolute Maximum Ratings (T = 25 C) a Parameter Symbol Value Unit Collector Base Voltage VCB

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mmbtsc3875-o mmbtsc3875-y mmbtsc3875-g mmbtsc3875-l.pdf pdf_icon

MMBTSC3875 NPN Transistor Features For Switching and AF Amplifier Applications. SOT-23 As Complementary Type of the PNP Transistor (TO-236) MMBTSA1504 is Recommended. 1.Base 2.Emitter 3.Collector Marking MMBTSC3875O ALO MMBTSC3875Y ALY MMBTSC3875G ALG MMBTSC3875L ALL Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter

Otros transistores... MMBTSA1576W-Q , MMBTSA1576W-R , MMBTSA1576W-S , MMBTSC2412 , MMBTSC2712-O , MMBTSC2712-Y , MMBTSC2712-G , MMBTSC2712-L , TIP41C , MMBTSC3356-R , MMBTSC3356-S , MMBTSC4081W-Q , MMBTSC4081W-R , MMBTSC4081W-S , MMDT3052DW-E , MMDT3052DW-F , MMDT3052DW-G .