MMBTSC3356-Q - параметры, поиск аналогов, даташиты транзистора

MMBTSC3356-Q Datasheet (PDF)

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MMBTSC3356 NPN Silicon Epitaxial Planar Transistor for microwave low noise amplifier at VHF, UHF and CATV band The transistor is subdivided into three groups, Q, R and S, according to its DC current gain. SOT-23 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 20 VCollector Emitter Voltage VCEO 12 VEmitter Base V

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MMBTSC3356 NPN Silicon Epitaxial Planar Transistorfor microwave low noise amplifier at VHF,UHF and CATV bandThe transistor is subdivided into threegroups, Q, R and S, according to its DCcurrent gain.1.Base 2.Emitter 3.CollectorHFE MARKINGSOT-23 Plastic PackageQ R23R R24S R25OAbsolute Maximum Ratings (T = 25 C)aParameter Symbol Value UnitCollector Base Voltage VCB

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MMBTSC3875NPN Transistor Features For Switching and AF Amplifier Applications.SOT-23 As Complementary Type of the PNP Transistor (TO-236) MMBTSA1504 is Recommended.1.Base 2.Emitter 3.CollectorMarking:MMBTSC3875O:ALOMMBTSC3875Y:ALYMMBTSC3875G:ALGMMBTSC3875L:ALLAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter

Другие транзисторы... MMBTSA1576W-Q , MMBTSA1576W-R , MMBTSA1576W-S , MMBTSC2412 , MMBTSC2712-O , MMBTSC2712-Y , MMBTSC2712-G , MMBTSC2712-L , C945 , MMBTSC3356-R , MMBTSC3356-S , MMBTSC4081W-Q , MMBTSC4081W-R , MMBTSC4081W-S , MMDT3052DW-E , MMDT3052DW-F , MMDT3052DW-G .