MMDT4403DW
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMDT4403DW
Código: K2T
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 40
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.6
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 200
MHz
Capacitancia de salida (Cc): 8.5
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
SOT363
Búsqueda de reemplazo de transistor bipolar MMDT4403DW
MMDT4403DW
Datasheet (PDF)
..1. Size:1474K cn cbi
mmdt4403dw.pdf 
Plastic-Encapsulate Transistors DUAL TRANSISTOR (PNP+PNP)FEATURESSOT-363 Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2T Maximum Ratings (Ta=25 unless otherwise specified) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current
6.1. Size:170K diodes
mmdt4403.pdf
MMDT4403 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-363 C2 B1 E1 Ideal for Low Power Amplification and Switching Dim Min Max Ultra-Small Surface Mount Package A 0.10 0.30 B C Lead Free/RoHS Compliant (Note 3) B 1.15 1.35 "Green" Device (Note 4 and 5) E2 B2 C1C 2.00 2.20 Mechanical Data D 0.
6.2. Size:499K mcc
mmdt4403 sot-363.pdf
MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMMDT4403Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNPRoHS Compliant. See ordering information) Epitaxial Planar Die ConstructionPlastic-Encapsulate Ideal for Low Power Amplification and Switching
6.3. Size:247K secos
mmdt4403.pdf
MMDT4403PNP Silicon Elektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductSOT-363* Featureso.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REF(0.525)REFPower dissipation.O PCM : 0.2 W (Temp.=25 C) .053(1.35).096(2.45).045(1.15).085(2.15)Collector current.018(0.46).010(0.26)ICM : - 0.6 A.014(0.35).006(0.15)C B E.006(0.15)2 1
6.4. Size:1509K jiangsu
mmdt4403.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T DUAL TRANSISTOR (PNP+PNP) MMDT4403SOT-363 FEATURES Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2T Maximum Ratings (Ta=25 unless otherwise specified) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO
6.5. Size:250K lge
mmdt4403.pdf
MMDT4403 SOT-363 Dual Transistor (PNP)SOT-363Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2T Maximum Ratings (TA = 25 unless otherwise specified) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5
6.6. Size:371K cn yangzhou yangjie elec
mmdt4403.pdf
RoHS COMPLIANT MMDT4403Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:K2T Equivalent circuit 1 / 5 S-S3079 Yangzhou
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