MMDT4403DW Datasheet, Equivalent, Cross Reference Search
Type Designator: MMDT4403DW
SMD Transistor Code: K2T
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 8.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT363
MMDT4403DW Transistor Equivalent Substitute - Cross-Reference Search
MMDT4403DW Datasheet (PDF)
mmdt4403dw.pdf
Plastic-Encapsulate Transistors DUAL TRANSISTOR (PNP+PNP)FEATURESSOT-363 Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2T Maximum Ratings (Ta=25 unless otherwise specified) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current
mmdt4403.pdf
MMDT4403 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-363 C2 B1 E1 Ideal for Low Power Amplification and Switching Dim Min Max Ultra-Small Surface Mount Package A 0.10 0.30 B C Lead Free/RoHS Compliant (Note 3) B 1.15 1.35 "Green" Device (Note 4 and 5) E2 B2 C1C 2.00 2.20 Mechanical Data D 0.
mmdt4403 sot-363.pdf
MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMMDT4403Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNPRoHS Compliant. See ordering information) Epitaxial Planar Die ConstructionPlastic-Encapsulate Ideal for Low Power Amplification and Switching
mmdt4403.pdf
MMDT4403PNP Silicon Elektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductSOT-363* Featureso.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REF(0.525)REFPower dissipation.O PCM : 0.2 W (Temp.=25 C) .053(1.35).096(2.45).045(1.15).085(2.15)Collector current.018(0.46).010(0.26)ICM : - 0.6 A.014(0.35).006(0.15)C B E.006(0.15)2 1
mmdt4403.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T DUAL TRANSISTOR (PNP+PNP) MMDT4403SOT-363 FEATURES Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2T Maximum Ratings (Ta=25 unless otherwise specified) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V VCEO
mmdt4403.pdf
MMDT4403 SOT-363 Dual Transistor (PNP)SOT-363Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2T Maximum Ratings (TA = 25 unless otherwise specified) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -40 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5
mmdt4403.pdf
RoHS COMPLIANT MMDT4403Dual PNP Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:K2T Equivalent circuit 1 / 5 S-S3079 Yangzhou
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
