2SB649AD Todos los transistores

2SB649AD Rev.A May.-2016 DATA SHEET / Descriptions TO-252 PNP Silicon PNP transistor in a TO-252 Plastic Package. / Features 2SD669AD Complementary pair with 2SD669AD. / Applications Low frequency power amplifier. / Equivalent Circuit / Pinni

UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 1 SOT-223 SOT-89 APPLICATIONS 1 * Low frequency power amplifier complementary pair with UTC 1 2SD669/A TO-252 TO-92 1 1 TO-126 TO-92NL 1 1 TO-126S TO-126C ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

2SB649, 2SB649A Silicon PNP Epitaxial Application Low frequency power amplifier complementary pair with 2SD669/A Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 2SB649, 2SB649A Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SB649 2SB649A Unit Collector to base voltage VCBO 180 180 V Collector to emitter voltage VCEO 120 160 V Emitter to base v

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB649/2SB649A TRANSISTOR (PNP) TO- 126 FEATURES Low Frequency Power Amplifier Complementary Pair with 2SD669/A 1. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. COLLECTOR Symbol Parameter Value Unit 3. BASE VCBO Collector-Base Voltage -180 V VCEO Collector-Emit

JMnic Product Specification Silicon PNP Power Transistors 2SB649 2SB649A DESCRIPTION With TO-126 package Complement to type 2SD669/669A High breakdown voltage VCEO -120/-160V High current -1.5A Low saturation voltage,excellent hFE linearity APPLICATIONS For low-frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected t

2SB649/2SB649A(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.500 7.400 2.900 1.100 Symbol Parameter Value Units 7.800 1.500 VCBO Collector-Base Voltage -180 V 3.900 3.000 4.100 VCEO Collector-Emitter Voltage 3

2SB649/2SB649A TO-126C Transistor (PNP) TO-126C 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Low frequency power amplifier complementary pair with 2SD669/A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -180 V 3.000 7.800 3.400 8.200 1.800 VCEO Collector-Emitter Voltage 2.200 4.040 2SB649 -120 V

2SB649(A) Rev.F Mar.-2016 DATA SHEET / Descriptions TO-126 PNP Silicon PNP transistor in a TO-126 Plastic Package. / Features 2SD669(A) Complementary pair with 2SD669(A). / Applications Low frequency power amplifier. / Equivalent Circuit / Pin

RoHS RoHS 2SB649AM Series SEMICONDUCTOR Nell High Power Products Bipolar General Purpose PNP Power Transistor -1.5A / -120V, -160V / 20W 2.7 0.4 8.0 0.5 +0.15 3.1 - 0.1 1.1 (B) 3 2(C) (E) 1 TO-126 0.8 2.29 0.5 2.29 0.5 0.55 1.2 APPLICATIONS C Low frequency power amplifier complementary E C B B pair with 2SD669AM/2SD669AM-A PNP E All dimensions in millimeter

RoHS RoHS 2SB649AM Series SEMICONDUCTOR Nell High Power Products Bipolar General Purpose PNP Power Transistor -1.5A / -120V, -160V / 20W 2.7 0.4 8.0 0.5 +0.15 3.1 - 0.1 1.1 (B) 3 2(C) (E) 1 TO-126 0.8 2.29 0.5 2.29 0.5 0.55 1.2 APPLICATIONS C Low frequency power amplifier complementary E C B B pair with 2SD669AM/2SD669AM-A PNP E All dimensions in millimeter

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB649A DESCRIPTION High Collector Current-IC=-1.5A High Collector-Emitter Breakdown Voltage- V(BR)CEO=-160V(Min) Good Linearity of hFE Low Saturation Voltage Complement to Type 2SD669A APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAME