2SD1857D-R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1857D-R
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 120 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 80 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hfe): 180
Paquete / Cubierta: TO252
Búsqueda de reemplazo de transistor bipolar 2SD1857D-R
2SD1857D-R Datasheet (PDF)
2sd1857d.pdf
2SD1857D Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features High breakdown voltage ,Low collector output capacitance ,High transition frequency. / Applications ,
2sc4132 2sd1857.pdf
2SC4132 / 2SD1857 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857 External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC41324.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1)3) High transition frequency. (fT = 80MHz) (2)4) Complements the 2SB1236. (3)(1) Base(Gate)(2) Collector(Drain)RO
2sd2211 2sd1918 2sd1857a.pdf
2SD2211 / 2SD1918 / 2SD1857ATransistorsPower Transistor (160V , 1.5A)2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units : mm)1) High breakdown voltage.(BVCEO = 160V)2) Low collector output capacitance.2SD22114.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V)(1)3) High transition frequency.(fT = 80MHZ)(2)4) Complements the 2SB1275 / 2SB1236A.(3)(1) Base(Gate)
2sb1275 2sb1236a 2sb1569a 2sb1186a 2sd2211 2sd1918 2sd1857a 2sd2400a 2sd1763a.pdf
2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277
2sd1857.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 1 FEATURES TO-126 TO-126S* High breakdown voltage.(BV =120V) CEO* Low collector output capacitance.(Typ.20pF at V =10V) CB* High transition frequency.(f =80MHz) T11TO-92 TO-92NL11TO-251 SOT-223 ORDERING INFORMATION Ordering Number Pin Assignment Package Packin
2sd1857.pdf
2SD1857 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features High breakdown voltage ,Low collector output capacitance ,High transition frequency. / Applications ,,
2sd1857.pdf
isc Silicon NPN Power Transistor 2SD1857DESCRIPTIONHigh breakdown voltage. (BV = 120V)CEOLow collector output capacitance.High transition frequency. (fT = 50MHz)Complement to Type 2SB1236Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio amplifier,voltage regulator, and general purpose power amplifier
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
