MJE13003DI1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJE13003DI1G  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 800 V

Tensión colector-emisor (Vce): 500 V

Tensión emisor-base (Veb): 9 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 5 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO92

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MJE13003DI1G datasheet

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 mje13003di1g.pdf pdf_icon

MJE13003DI1G

MJE13003DI1G Rev.B May.-2020 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High Voltage Capability High Speed Switching. HF Product. / Applications

 3.1. Size:291K  foshan
 mje13003di1.pdf pdf_icon

MJE13003DI1G

MJE13003DI1(3DD13003DI1) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 600 V

 4.1. Size:346K  foshan
 mje13003di5.pdf pdf_icon

MJE13003DI1G

MJE13003DI5(3DD13003DI5) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 800 V

 4.2. Size:302K  foshan
 mje13003di3.pdf pdf_icon

MJE13003DI1G

MJE13003DI3(3DD13003DI3) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications converters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 800 V

MOSTRAR MÁS

Otros transistores... 2SD669AD, 2SD669AD-B, 2SD669AD-C, 2SD669AD-D, 3CA8550, 3CA8550-B, 3CA8550-C, 3CA8550-D, 2SB649, MPSA95, S8050MG-B, S8050MG-C, S8050MG-D, S8550MG-B, S8550MG-C, S8550MG-D, FD965S