BFP405 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFP405
Código: AL*
Material: SiGe
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.075 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 4.5 V
Tensión emisor-base (Veb): 1.5 V
Corriente del colector DC máxima (Ic): 0.025 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 18000 MHz
Capacitancia de salida (Cc): 0.05 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: SOT343
Búsqueda de reemplazo de transistor bipolar BFP405
BFP405 Datasheet (PDF)
bfp405.pdf
SIEGET25 BFP405NPN Silicon RF TransistorFor Low Current ApplicationsFor Oscillators up to 12 GHzNoise Figure F = 1.15 dB at 1.8 GHzOutstanding Gms = 22 dB at 1.8 GHzTransition Frequency fT = 25 GHzGold metalization for high reliability SIEGET25-LineSiemens Grounded Emitter Transistor-25 GHz fT-LineESD: Electrostatic discharge sensitive device,observe hand
bfp405.pdf
BFP405Low Noise Silicon Bipolar RF Transistor For low current applications3 For oscillators up to 12 GHz241 Minimum noise figure NFmin = 1.25 dB at 1.8 GHz Outstanding Gms = 23 dB at 1.8 GHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive devi
bfp405f.pdf
BFP405FLow profile wideband silicon NPN RF bipolar transistorProduct descriptionThe BFP405F is a low noise device based on a grounded emitter (SIEGET) that is part ofInfineons established fourth generation RF bipolar transistor family. Its transitionfrequency fT of 25 GHz and low current characteristics make the device suitable foroscillators up to 12 GHz. It remains cost comp
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