BFP405 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFP405

Código: AL*

Material: SiGe

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.075 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 4.5 V

Tensión emisor-base (Veb): 1.5 V

Corriente del colector DC máxima (Ic): 0.025 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 18000 MHz

Capacitancia de salida (Cc): 0.05 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: SOT343

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BFP405 datasheet

 ..1. Size:66K  siemens
 bfp405.pdf pdf_icon

BFP405

SIEGET 25 BFP405 NPN Silicon RF Transistor For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 22 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability SIEGET 25-Line Siemens Grounded Emitter Transistor- 25 GHz fT-Line ESD Electrostatic discharge sensitive device, observe hand

 ..2. Size:559K  infineon
 bfp405.pdf pdf_icon

BFP405

BFP405 Low Noise Silicon Bipolar RF Transistor For low current applications 3 For oscillators up to 12 GHz 2 4 1 Minimum noise figure NFmin = 1.25 dB at 1.8 GHz Outstanding Gms = 23 dB at 1.8 GHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive devi

 0.1. Size:1332K  infineon
 bfp405f.pdf pdf_icon

BFP405

BFP405F Low profile wideband silicon NPN RF bipolar transistor Product description The BFP405F is a low noise device based on a grounded emitter (SIEGET ) that is part of Infineon s established fourth generation RF bipolar transistor family. Its transition frequency fT of 25 GHz and low current characteristics make the device suitable for oscillators up to 12 GHz. It remains cost comp

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