SIEGET25 BFP405NPN Silicon RF TransistorFor Low Current ApplicationsFor Oscillators up to 12 GHzNoise Figure F = 1.15 dB at 1.8 GHzOutstanding Gms = 22 dB at 1.8 GHzTransition Frequency fT = 25 GHzGold metalization for high reliability SIEGET25-LineSiemens Grounded Emitter Transistor-25 GHz fT-LineESD: Electrostatic discharge sensitive device,observe hand

BFP405Low Noise Silicon Bipolar RF Transistor For low current applications3 For oscillators up to 12 GHz241 Minimum noise figure NFmin = 1.25 dB at 1.8 GHz Outstanding Gms = 23 dB at 1.8 GHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 availableESD (Electrostatic discharge) sensitive devi

BFP405FLow profile wideband silicon NPN RF bipolar transistorProduct descriptionThe BFP405F is a low noise device based on a grounded emitter (SIEGET) that is part ofInfineons established fourth generation RF bipolar transistor family. Its transitionfrequency fT of 25 GHz and low current characteristics make the device suitable foroscillators up to 12 GHz. It remains cost comp