BFP640ESD Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BFP640ESD

Código: T4*

Material: SiGe

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 4.8 V

Tensión colector-emisor (Vce): 4.1 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 45000 MHz

Capacitancia de salida (Cc): 0.08 pF

Ganancia de corriente contínua (hFE): 110

Encapsulados: SOT343

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BFP640ESD datasheet

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BFP640ESD

BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Product description The BFP640ESD is a RF bipolar transistor based on SiGe C technology that is part of Infineon s established sixth generation transistor family. Its ESD structure, high RF gain and low noise figure characteristics make the device suitable for a wide range of wireless applications. It remains cost competit

 8.1. Size:429K  infineon
 bfp640.pdf pdf_icon

BFP640ESD

BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Product description The BFP640 is a RF bipolar transistor based on SiGe C technology that is part of Infineon s established sixth generation transistor family. Its transition frequency fT of 42 GHz and high linearity characteristics at low currents make this device particularly suitable for energy efficiency designs a

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