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BFP640ESD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BFP640ESD
   Código: T4*
   Material: SiGe
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 4.8 V
   Tensión colector-emisor (Vce): 4.1 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 45000 MHz
   Capacitancia de salida (Cc): 0.08 pF
   Ganancia de corriente contínua (hfe): 110
   Paquete / Cubierta: SOT343
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BFP640ESD Datasheet (PDF)

 ..1. Size:533K  infineon
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BFP640ESD

BFP640ESDSurface mount robust silicon NPN RF bipolar transistorProduct descriptionThe BFP640ESD is a RF bipolar transistor based on SiGe:C technology that is part ofInfineons established sixth generation transistor family. Its ESD structure, high RF gainand low noise figure characteristics make the device suitable for a wide range of wirelessapplications. It remains cost competit

 8.1. Size:429K  infineon
 bfp640.pdf pdf_icon

BFP640ESD

BFP640Surface mount high linearity silicon NPN RF bipolar transistorProduct descriptionThe BFP640 is a RF bipolar transistor based on SiGe:C technology that is part ofInfineons established sixth generation transistor family. Its transition frequency fT of42 GHz and high linearity characteristics at low currents make this device particularlysuitable for energy efficiency designs a

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC1077 | BCR196F | 2SD1739 | 3DG12 | BC850B-AU | STA406A | 2N2936

 

 
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