BFP640ESD Datasheet. Specs and Replacement

Type Designator: BFP640ESD

SMD Transistor Code: T4*

Material of Transistor: SiGe

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 4.8 V

Maximum Collector-Emitter Voltage |Vce|: 4.1 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 45000 MHz

Collector Capacitance (Cc): 0.08 pF

Forward Current Transfer Ratio (hFE), MIN: 110

Noise Figure, dB: -

Package: SOT343

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BFP640ESD datasheet

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BFP640ESD

BFP640ESD Surface mount robust silicon NPN RF bipolar transistor Product description The BFP640ESD is a RF bipolar transistor based on SiGe C technology that is part of Infineon s established sixth generation transistor family. Its ESD structure, high RF gain and low noise figure characteristics make the device suitable for a wide range of wireless applications. It remains cost competit... See More ⇒

 8.1. Size:429K  infineon

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BFP640ESD

BFP640 Surface mount high linearity silicon NPN RF bipolar transistor Product description The BFP640 is a RF bipolar transistor based on SiGe C technology that is part of Infineon s established sixth generation transistor family. Its transition frequency fT of 42 GHz and high linearity characteristics at low currents make this device particularly suitable for energy efficiency designs a... See More ⇒

Detailed specifications: BFP410, BFP420, BFP450, BFP520F, BFP540, BFP540ESD, BFP540FESD, BFP640, 2SA1837, BFP650, BFP650F, BFP720, BFP720ESD, BFP720F, BFP720FESD, BFP740ESD, BFP740F

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