All Transistors. BFP640ESD Datasheet

 

BFP640ESD Datasheet and Replacement


   Type Designator: BFP640ESD
   SMD Transistor Code: T4*
   Material of Transistor: SiGe
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 4.8 V
   Maximum Collector-Emitter Voltage |Vce|: 4.1 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 45000 MHz
   Collector Capacitance (Cc): 0.08 pF
   Forward Current Transfer Ratio (hFE), MIN: 110
   Noise Figure, dB: -
   Package: SOT343
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BFP640ESD Datasheet (PDF)

 ..1. Size:533K  infineon
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BFP640ESD

BFP640ESDSurface mount robust silicon NPN RF bipolar transistorProduct descriptionThe BFP640ESD is a RF bipolar transistor based on SiGe:C technology that is part ofInfineons established sixth generation transistor family. Its ESD structure, high RF gainand low noise figure characteristics make the device suitable for a wide range of wirelessapplications. It remains cost competit

 8.1. Size:429K  infineon
 bfp640.pdf pdf_icon

BFP640ESD

BFP640Surface mount high linearity silicon NPN RF bipolar transistorProduct descriptionThe BFP640 is a RF bipolar transistor based on SiGe:C technology that is part ofInfineons established sixth generation transistor family. Its transition frequency fT of42 GHz and high linearity characteristics at low currents make this device particularlysuitable for energy efficiency designs a

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SC1262 | 2SA1483 | BC167 | ECG2360 | BDX85B | 2SD5032 | SGSF321

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