BFP640ESD Datasheet, Equivalent, Cross Reference Search
Type Designator: BFP640ESD
SMD Transistor Code: T4*
Material of Transistor: SiGe
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 4.8 V
Maximum Collector-Emitter Voltage |Vce|: 4.1 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 45000 MHz
Collector Capacitance (Cc): 0.08 pF
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package: SOT343
BFP640ESD Transistor Equivalent Substitute - Cross-Reference Search
BFP640ESD Datasheet (PDF)
bfp640esd.pdf
BFP640ESDSurface mount robust silicon NPN RF bipolar transistorProduct descriptionThe BFP640ESD is a RF bipolar transistor based on SiGe:C technology that is part ofInfineons established sixth generation transistor family. Its ESD structure, high RF gainand low noise figure characteristics make the device suitable for a wide range of wirelessapplications. It remains cost competit
bfp640.pdf
BFP640Surface mount high linearity silicon NPN RF bipolar transistorProduct descriptionThe BFP640 is a RF bipolar transistor based on SiGe:C technology that is part ofInfineons established sixth generation transistor family. Its transition frequency fT of42 GHz and high linearity characteristics at low currents make this device particularlysuitable for energy efficiency designs a
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
