BFP740FESD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BFP740FESD
Código: T7*
Material: SiGe
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.16 W
Tensión colector-base (Vcb): 4.9 V
Tensión colector-emisor (Vce): 4.2 V
Corriente del colector DC máxima (Ic): 0.045 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 47000 MHz
Capacitancia de salida (Cc): 0.08 pF
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: TSFP4-1
Búsqueda de reemplazo de transistor bipolar BFP740FESD
BFP740FESD Datasheet (PDF)
bfp740fesd.pdf
BFP740FESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness:21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.6 dB at 2.4 GHz and 0.8 dB
bfp740f.pdf
BFP740FLow Noise Silicon Germanium Bipolar RF TransistorData SheetRevision 2.0, 2015-03-12RF & Protection DevicesEdition 2015-03-12Published byInfineon Technologies AG81726 Munich, Germany 2015 Infineon Technologies AGAll Rights Reserved.Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristi
bfp740.pdf
BFP740SiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT).Feature list Low noise figure NFmin = 0.85 dB at 5.5 GHz, 3 V, 6 mA High gain Gms = 19.5 dB at 5.5 GHz, 3 V, 15 mA OIP3 = 24.5 dBm at 5.5 GHz, 3 V, 15 mAProduct validationQualified for industrial applications according to the relevant tests
bfp740esd.pdf
BFP740ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness:21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.65 dB at 2.4 GHz and 0.9 dB
bfp740.pdf
SMD Type TransistorsNPN TransistorsBFP740 (KFP740)Uint: mmSOT-3430.9 0.10.22 Features 0.1 MAX.1.30.1 High gain ultra low noise RF transistorA4 3 High maximum stable gain Gold metallization for extra high reliability0.15 150 GHz fT-Silicon Germanium technology1 2+0.1 +0.1 Outstanding noise figure F = 0.5 dB at 1.8 GHz0.30.15
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
