Справочник транзисторов. BFP740FESD

 

Биполярный транзистор BFP740FESD - описание производителя. Основные параметры. Даташиты.

Наименование производителя: BFP740FESD

Маркировка: T7*

Тип материала: SiGe

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 0.16 W

Макcимально допустимое напряжение коллектор-база (Ucb): 4.9 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 4.2 V

Макcимальный постоянный ток коллектора (Ic): 0.045 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 47000 MHz

Ёмкость коллекторного перехода (Cc): 0.08 pf

Статический коэффициент передачи тока (hfe): 160

Корпус транзистора: TSFP4-1

Аналоги (замена) для BFP740FESD

 

 

BFP740FESD Datasheet (PDF)

..1. bfp740fesd.pdf Size:627K _infineon

BFP740FESD
BFP740FESD

BFP740FESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740FESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness:21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.6 dB at 2.4 GHz and 0.8 dB

7.1. bfp740f.pdf Size:1510K _infineon

BFP740FESD
BFP740FESD

BFP740FLow Noise Silicon Germanium Bipolar RF TransistorData SheetRevision 2.0, 2015-03-12RF & Protection DevicesEdition 2015-03-12Published byInfineon Technologies AG81726 Munich, Germany 2015 Infineon Technologies AGAll Rights Reserved.Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristi

8.1. bfp740esd.pdf Size:519K _infineon

BFP740FESD
BFP740FESD

BFP740ESDSiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740ESD is a wideband NPN RF heterojunction bipolar transistor (HBT) with anintegrated ESD protection.Feature list Unique combination of high end RF performance and robustness:21 dBm maximum RF input power, 2 kV ESD robustness (HBM) due to integrated protection circuits NFmin = 0.65 dB at 2.4 GHz and 0.9 dB

8.2. bfp740.pdf Size:658K _infineon

BFP740FESD
BFP740FESD

BFP740SiGe:C NPN RF bipolar transistorProduct descriptionThe BFP740 is a wideband NPN RF heterojunction bipolar transistor (HBT).Feature list Low noise figure NFmin = 0.85 dB at 5.5 GHz, 3 V, 6 mA High gain Gms = 19.5 dB at 5.5 GHz, 3 V, 15 mA OIP3 = 24.5 dBm at 5.5 GHz, 3 V, 15 mAProduct validationQualified for industrial applications according to the relevant tests

 8.3. bfp740.pdf Size:1761K _kexin

BFP740FESD
BFP740FESD

SMD Type TransistorsNPN TransistorsBFP740 (KFP740)Uint: mmSOT-3430.9 0.10.22 Features 0.1 MAX.1.30.1 High gain ultra low noise RF transistorA4 3 High maximum stable gain Gold metallization for extra high reliability0.15 150 GHz fT-Silicon Germanium technology1 2+0.1 +0.1 Outstanding noise figure F = 0.5 dB at 1.8 GHz0.30.15

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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