L2SA1037AKQLT3G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L2SA1037AKQLT3G
Código: FQ
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 140 MHz
Capacitancia de salida (Cc): 4 pF
Ganancia de corriente contínua (hFE): 120
Encapsulados: SOT23
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L2SA1037AKQLT3G datasheet
l2sa1037akqlt1g l2sa1037akqlt3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements. S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Pack
l2sa1037akqlt1g l2sa1037akslt1g l2sa1037akrlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements. S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Pack
l2sa1037akqlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements. S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Pack
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History: KSA812G
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