L2SA1037AKQLT3G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: L2SA1037AKQLT3G

Código: FQ

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 140 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT23

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L2SA1037AKQLT3G datasheet

 0.1. Size:142K  lrc
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L2SA1037AKQLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements. S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Pack

 1.1. Size:142K  lrc
l2sa1037akqlt1g l2sa1037akslt1g l2sa1037akrlt1g.pdf pdf_icon

L2SA1037AKQLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements. S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Pack

 1.2. Size:142K  lrc
l2sa1037akqlt1g.pdf pdf_icon

L2SA1037AKQLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements. S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Pack

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