L2SA1037AKQLT3G Datasheet, Equivalent, Cross Reference Search

   Type Designator: L2SA1037AKQLT3G
   SMD Transistor Code: FQ
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT23

L2SA1037AKQLT3G Transistor Equivalent Substitute - Cross-Reference Search

L2SA1037AKQLT3G Datasheet (PDF)

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l2sa1037akqlt1g l2sa1037akqlt3g.pdf

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFeaturesL2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements.S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.3ORDERING INFORMATIONShippingDevice Pack

1.1. Size:142K lrc
l2sa1037akqlt1g l2sa1037akslt1g l2sa1037akrlt1g.pdf