L2SC3356LT3G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L2SC3356LT3G
Código: R24
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 7000 MHz
Ganancia de corriente contínua (hFE): 82
Encapsulados: SOT23
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L2SC3356LT3G datasheet
l2sc3356lt1g l2sc3356lt3g.pdf
DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab
l2sc3356lt1g.pdf
DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab
l2sc3356wt1g.pdf
DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
l2sc3356wt1g l2sc3356wt3g.pdf
DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Otros transistores... L2SA812SLT3G , L2SC1623QLT3G , L2SC1623RLT3G , L2SC1623SLT3G , L2SC2411KRLT3G , L2SC2412KQLT3G , L2SC2412KRLT3G , L2SC2412KSLT3G , 431 , L2SC3356WT3G , L2SC3838LT3G , L2SC4081QT3G , L2SC4081RT3G , L2SC4081ST3G , L2SC4617QT3G , L2SC4617RT3G , L2SC4617ST3G .
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