L2SC3356LT3G Todos los transistores

 

L2SC3356LT3G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: L2SC3356LT3G
   Código: R24
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 7000 MHz
   Ganancia de corriente contínua (hfe): 82
   Paquete / Cubierta: SOT23
 

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L2SC3356LT3G datasheet

 ..1. Size:140K  lrc
 l2sc3356lt1g l2sc3356lt3g.pdf pdf_icon

L2SC3356LT3G

DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

 4.1. Size:140K  lrc
 l2sc3356lt1g.pdf pdf_icon

L2SC3356LT3G

DATA SHEET LESHAN RADIO COMPANY, LTD. L2SC3356LT1G DESCRIPTION The L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

 6.1. Size:167K  lrc
 l2sc3356wt1g.pdf pdf_icon

L2SC3356LT3G

DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

 6.2. Size:167K  lrc
 l2sc3356wt1g l2sc3356wt3g.pdf pdf_icon

L2SC3356LT3G

DATA SHEET LESHAN RADIO COMPANY, LTD. DESCRIPTION L2SC3356WT1G The L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1G low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

MOSTRAR MÁS

Otros transistores... L2SA812SLT3G , L2SC1623QLT3G , L2SC1623RLT3G , L2SC1623SLT3G , L2SC2411KRLT3G , L2SC2412KQLT3G , L2SC2412KRLT3G , L2SC2412KSLT3G , 431 , L2SC3356WT3G , L2SC3838LT3G , L2SC4081QT3G , L2SC4081RT3G , L2SC4081ST3G , L2SC4617QT3G , L2SC4617RT3G , L2SC4617ST3G .

History: DTS660

 

 

 


 
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