L2SC3356LT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: L2SC3356LT3G
   Código: R24
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 7000 MHz
   Ganancia de corriente contínua (hfe): 82
   Paquete / Cubierta: SOT23

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L2SC3356LT3G Datasheet (PDF)

..1. Size:140K lrc
l2sc3356lt1g l2sc3356lt3g.pdf

DATA SHEETLESHAN RADIO COMPANY, LTD.L2SC3356LT1GDESCRIPTIONThe L2SC3356LT1 is an NPN silicon epitaxial transistor designed for S-L2SC3356LT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic.3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capab

4.1. Size:140K lrc
l2sc3356lt1g.pdf

6.1. Size:167K lrc
l2sc3356wt1g.pdf

DATA SHEETLESHAN RADIO COMPANY, LTD.DESCRIPTION L2SC3356WT1GThe L2SC3356WT1is an NPN silicon epitaxial transistor designed for S-L2SC3356WT1Glow noise amplifier at VHF, UHF and CATV band.It has dynamic range and good current characteristic. 3S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

6.2. Size:167K lrc
l2sc3356wt1g l2sc3356wt3g.pdf