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L9014TLT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: L9014TLT3G
   Código: 14T
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 400
   Paquete / Cubierta: SOT-23

 Búsqueda de reemplazo de transistor bipolar L9014TLT3G

 

L9014TLT3G Datasheet (PDF)

 ..1. Size:98K  lrc
l9014qlt1g l9014qlt3g l9014rlt1g l9014rlt3g l9014slt1g l9014slt3g l9014tlt1g l9014tlt3g.pdf

L9014TLT3G
L9014TLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9014QLT1GFEATURE Complementary to L9014.Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique SiteSeriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.DEVICE MARKING AND ORDERING INF

 6.1. Size:99K  lrc
l9014tlt1g.pdf

L9014TLT3G
L9014TLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURE Complementary to L9014.L9014QLT1G We declare that the material of product compliance with RoHS requirements.Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L9014QLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.SeriesDEVICE MARKING AND ORDERING IN

 6.2. Size:98K  lrc
l9014qlt1g l9014rlt1g l9014slt1g l9014tlt1g.pdf

L9014TLT3G
L9014TLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9014QLT1GFEATURE Complementary to L9014.Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique SiteSeriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.DEVICE MARKING AND ORDERING INF

 8.1. Size:1520K  cn vbsemi
irfl9014trpbf.pdf

L9014TLT3G
L9014TLT3G

IRFL9014TRPBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Pa

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History: HPT1012

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