L9014TLT3G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: L9014TLT3G

Código: 14T

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 400

Encapsulados: SOT-23

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L9014TLT3G datasheet

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 l9014qlt1g l9014qlt3g l9014rlt1g l9014rlt3g l9014slt1g l9014slt3g l9014tlt1g l9014tlt3g.pdf pdf_icon

L9014TLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9014QLT1G FEATURE Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INF

 6.1. Size:99K  lrc
 l9014tlt1g.pdf pdf_icon

L9014TLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE Complementary to L9014. L9014QLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9014QLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING IN

 6.2. Size:98K  lrc
 l9014qlt1g l9014rlt1g l9014slt1g l9014tlt1g.pdf pdf_icon

L9014TLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9014QLT1G FEATURE Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INF

 8.1. Size:1520K  cn vbsemi
 irfl9014trpbf.pdf pdf_icon

L9014TLT3G

IRFL9014TRPBF www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.055 at VGS = - 10 V - 7.0 APPLICATIONS - 60 30 nC 0.065 at VGS = - 4.5 V - 6.0 Load Switch S SOT-223 G D S D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Pa

MOSTRAR MÁS

Otros transistores... L9012SLT3G, L9013PLT3G, L9013QLT3G, L9013RLT3G, L9013SLT3G, L9014QLT3G, L9014RLT3G, L9014SLT3G, A1941, L9015QLT3G, L9015RLT3G, L9015SLT3G, LBC807-16LT3G, LBC807-25LT3G, LBC807-25WT3G, LBC807-40LT3G, LBC807-40WT3G