L9014TLT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L9014TLT3G
Código: 14T
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 400
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar L9014TLT3G
L9014TLT3G Datasheet (PDF)
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9014QLT1GFEATURE Complementary to L9014.Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique SiteSeriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.DEVICE MARKING AND ORDERING INF
l9014tlt1g.pdf
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconFEATURE Complementary to L9014.L9014QLT1G We declare that the material of product compliance with RoHS requirements.Series S- Prefix for Automotive and Other Applications Requiring Unique SiteS-L9014QLT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.SeriesDEVICE MARKING AND ORDERING IN
l9014qlt1g l9014rlt1g l9014slt1g l9014tlt1g.pdf
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LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL9014QLT1GFEATURE Complementary to L9014.Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique SiteSeriesand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.DEVICE MARKING AND ORDERING INF
irfl9014trpbf.pdf
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IRFL9014TRPBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % UIS Tested0.055 at VGS = - 10 V - 7.0APPLICATIONS- 60 30 nC0.065 at VGS = - 4.5 V - 6.0 Load SwitchSSOT-223GDSDGDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted)Pa
Otros transistores... HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2SA1015 , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: HPT1012
History: HPT1012
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Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D