L9014TLT3G - описание и поиск аналогов

 

L9014TLT3G - Аналоги. Основные параметры


   Наименование производителя: L9014TLT3G
   Маркировка: 14T
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.225 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 400
   Корпус транзистора: SOT-23

 Аналоги (замена) для L9014TLT3G

   - подбор ⓘ биполярного транзистора по параметрам

 

L9014TLT3G - технические параметры

 ..1. Size:98K  lrc
 l9014qlt1g l9014qlt3g l9014rlt1g l9014rlt3g l9014slt1g l9014slt3g l9014tlt1g l9014tlt3g.pdf pdf_icon

L9014TLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9014QLT1G FEATURE Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INF

 6.1. Size:99K  lrc
 l9014tlt1g.pdf pdf_icon

L9014TLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon FEATURE Complementary to L9014. L9014QLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L9014QLT1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Series DEVICE MARKING AND ORDERING IN

 6.2. Size:98K  lrc
 l9014qlt1g l9014rlt1g l9014slt1g l9014tlt1g.pdf pdf_icon

L9014TLT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L9014QLT1G FEATURE Complementary to L9014. Series We declare that the material of product compliance with RoHS requirements. S-L9014QLT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INF

 8.1. Size:1520K  cn vbsemi
 irfl9014trpbf.pdf pdf_icon

L9014TLT3G

IRFL9014TRPBF www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested 0.055 at VGS = - 10 V - 7.0 APPLICATIONS - 60 30 nC 0.065 at VGS = - 4.5 V - 6.0 Load Switch S SOT-223 G D S D G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Pa

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Другие транзисторы... L9012SLT3G , L9013PLT3G , L9013QLT3G , L9013RLT3G , L9013SLT3G , L9014QLT3G , L9014RLT3G , L9014SLT3G , A1941 , L9015QLT3G , L9015RLT3G , L9015SLT3G , LBC807-16LT3G , LBC807-25LT3G , LBC807-25WT3G , LBC807-40LT3G , LBC807-40WT3G .

 

 
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