LBC807-25LT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LBC807-25LT3G
Código: 5B1
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 160
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de transistor bipolar LBC807-25LT3G
LBC807-25LT3G Datasheet (PDF)
lbc807-16lt1g lbc807-16lt3g lbc807-25lt1g lbc807-25lt3g lbc807-40lt1g lbc807-40lt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V.LBC807-40LT1G General purpose switching and amplification.S-LBC807-16LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.S-LBC8
lbc807-25lt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC807-16LT1GLBC807-25LT1GPNP SiliconLBC807-40LT1GFEATURES-LBC807-16LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V.S-LBC807-25LT1G General purpose switching and amplification.S-LBC807-40LT1G PNP complement: LBC807 Series. We declare that the material of product complia
lbc807-16lt1g lbc807-25lt1g lbc807-40lt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURELBC807-25LT1GLBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.3 PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.12DEVICE MARKIN
lbc807-25wt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE LBC807-25WT1GS-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement: LBC807 Series.3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other
lbc807-25wt1g lbc807-25wt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE LBC807-25WT1GS-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement: LBC807 Series.3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other
lbc807-25dmt1g.pdf
LESHAN RADIO COMPANY, LTD.LBC807-16DMT1GLBC807-25DMT1GDual General Purpose TransistorsLBC807-40DMT1GPNP DualsS-LBC807-16DMT1G We declare that the material of product compliance with RoHS requirements.S-LBC807-25DMT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LBC807-40DMT
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