Справочник транзисторов. LBC807-25LT3G

 

Биполярный транзистор LBC807-25LT3G Даташит. Аналоги


   Наименование производителя: LBC807-25LT3G
   Маркировка: 5B1
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.225 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 10 pf
   Статический коэффициент передачи тока (hfe): 160
   Корпус транзистора: SOT-23
 

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LBC807-25LT3G Datasheet (PDF)

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lbc807-16lt1g lbc807-16lt3g lbc807-25lt1g lbc807-25lt3g lbc807-40lt1g lbc807-40lt3g.pdfpdf_icon

LBC807-25LT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURE Collector current capability IC = -500 mA. LBC807-25LT1G Collector-emitter voltage VCEO(max) = -45 V.LBC807-40LT1G General purpose switching and amplification.S-LBC807-16LT1G PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.S-LBC8

 3.1. Size:254K  lrc
lbc807-25lt1g.pdfpdf_icon

LBC807-25LT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC807-16LT1GLBC807-25LT1GPNP SiliconLBC807-40LT1GFEATURES-LBC807-16LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V.S-LBC807-25LT1G General purpose switching and amplification.S-LBC807-40LT1G PNP complement: LBC807 Series. We declare that the material of product complia

 3.2. Size:138K  lrc
lbc807-16lt1g lbc807-25lt1g lbc807-40lt1g.pdfpdf_icon

LBC807-25LT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLBC807-16LT1GFEATURELBC807-25LT1GLBC807-40LT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification.3 PNP complement: LBC807 Series. We declare that the material of product compliance with RoHS requirements.12DEVICE MARKIN

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lbc807-25wt1g.pdfpdf_icon

LBC807-25LT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE LBC807-25WT1GS-LBC807-25WT1G Collector current capability IC = -500 mA. Collector-emitter voltage VCEO(max) = -45 V. General purpose switching and amplification. PNP complement: LBC807 Series.3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other

Другие транзисторы... L9014QLT3G , L9014RLT3G , L9014SLT3G , L9014TLT3G , L9015QLT3G , L9015RLT3G , L9015SLT3G , LBC807-16LT3G , A733 , LBC807-25WT3G , LBC807-40LT3G , LBC807-40WT3G , LBC817-16DPMT3G , LBC817-25DPMT3G , LBC817-40DPMT3G , LBC817-40WT3G , LBC846ADW1T3G .

History: NSS1C200LT1G

 

 
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