LBC846AWT3G
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LBC846AWT3G
Código: 1A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 65
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 4.5
pF
Ganancia de corriente contínua (hfe): 110
Paquete / Cubierta:
SOT-323
Búsqueda de reemplazo de transistor bipolar LBC846AWT3G
LBC846AWT3G
Datasheet (PDF)
..1. Size:402K lrc
lbc846awt1g lbc846awt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC846AWT1G,BWT1GLBC847AWT1G,BWT1GNPN SiliconWe declare that the material of product compliance with RoHS requirements. CWT1GS- Prefix for Automotive and Other Applications Requiring Unique SiteLBC848AWT1G,BWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATION Pb Free
5.2. Size:600K lrc
lbc846awt1g.pdf
LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique SiteLBC848AWT1G,BWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATION Pb Free
7.4. Size:224K lrc
lbc846adw1t1g.pdf
LESHAN RADIO COMPANY, LTD.LBC846ADW1T1GLBC846BDW1T1GDual General Purpose TransistorsLBC847BDW1T1GLBC847CDW1T1GNPN DualsLBC848BDW1T1GLBC848CDW1T1G These transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isS-LBC846ADW1T1Gdesigned for low power surface mount applications. S-LBC846BDW1T1GS-LBC847BDW1T1GWe d
7.5. Size:209K lrc
lbc846bdw1t1g lbc847bdw1t1g lbc847cdw1t1g lbc848bdw1t1g lbc848cdw1t1g lbc846adw1t1g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848
7.7. Size:407K lrc
lbc846alt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang
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