Биполярный транзистор LBC846AWT3G
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: LBC846AWT3G
Маркировка: 1A
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.15
W
Макcимально допустимое напряжение коллектор-база (Ucb): 80
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 100
MHz
Ёмкость коллекторного перехода (Cc): 4.5
pf
Статический коэффициент передачи тока (hfe): 110
Корпус транзистора:
SOT-323
Аналоги (замена) для LBC846AWT3G
LBC846AWT3G
Datasheet (PDF)
..1. Size:402K lrc
lbc846awt1g lbc846awt3g.pdf LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC846AWT1G,BWT1GLBC847AWT1G,BWT1GNPN SiliconWe declare that the material of product compliance with RoHS requirements. CWT1GS- Prefix for Automotive and Other Applications Requiring Unique SiteLBC848AWT1G,BWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATION Pb Free
5.2. Size:600K lrc
lbc846awt1g.pdf LESHAN RADIO COMPANY, LTD.LBC846AWT1G,BWT1GGeneral Purpose TransistorsLBC847AWT1G,BWT1GNPN SiliconCWT1GWe declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other Applications Requiring Unique SiteLBC848AWT1G,BWT1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.CWT1G( )ORDERING INFORMATION Pb Free
7.4. Size:224K lrc
lbc846adw1t1g.pdf LESHAN RADIO COMPANY, LTD.LBC846ADW1T1GLBC846BDW1T1GDual General Purpose TransistorsLBC847BDW1T1GLBC847CDW1T1GNPN DualsLBC848BDW1T1GLBC848CDW1T1G These transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isS-LBC846ADW1T1Gdesigned for low power surface mount applications. S-LBC846BDW1T1GS-LBC847BDW1T1GWe d
7.5. Size:209K lrc
lbc846bdw1t1g lbc847bdw1t1g lbc847cdw1t1g lbc848bdw1t1g lbc848cdw1t1g lbc846adw1t1g.pdf LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848
7.7. Size:407K lrc
lbc846alt1g.pdf LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang
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