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LBC850BLT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LBC850BLT3G
   Código: 2F
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT-23
 

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LBC850BLT3G Datasheet (PDF)

 ..1. Size:402K  lrc
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LBC850BLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 3and Control C

 ..2. Size:404K  lrc
lbc849clt1g lbc849clt3g lbc850blt1g lbc850blt3g lbc850clt1g lbc850clt3g.pdf pdf_icon

LBC850BLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1 LBC846ALT1GS-LBC846ALT1G ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Chang

 ..3. Size:227K  lrc
lbc848blt1g lbc848blt3g lbc848clt1g lbc848clt3g lbc849blt1g lbc849blt3g lbc849clt1g lbc849clt3g lbc850blt1g lbc850blt3g lbc850clt1g lbc850clt3g.pdf pdf_icon

LBC850BLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLBC846ALT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements.31MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO VdcSOT23LBC846 6

 5.1. Size:402K  lrc
lbc850blt1g.pdf pdf_icon

LBC850BLT3G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN Silicon Moisture Sensitivity Level: 1LBC846ALT1G ESD Rating Human Body Model: >4000 VS-LBC846ALT1GESD Rating Machine Model: >400 V Series We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Cha

Otros transistores... LBC848BPDW1T3G , LBC848CDW1T3G , LBC848CLT3G , LBC848CPDW1T3G , LBC849BLT1G , LBC849BLT3G , LBC849CLT1G , LBC849CLT3G , S9013 , LBC850CLT3G , LBC856ADW1T1G , LBC856ALT3G , LBC856BLT3G , LBC857ATT1G , LBC857BLT3G , LBC857CTT1G , LBC858BLT3G .

History: NSS1C300ET4G | 2SB1123R

 

 
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