LBC857ATT1G Todos los transistores

 

LBC857ATT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LBC857ATT1G
   Código: 3E
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 125
   Paquete / Cubierta: SC-89

 Búsqueda de reemplazo de transistor bipolar LBC857ATT1G

 

LBC857ATT1G Datasheet (PDF)

 ..1. Size:135K  lrc
lbc857att1g lbc857btt1g lbc857ctt1g.pdf

LBC857ATT1G
LBC857ATT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857ATT1GPNP Silicon SeriesThese transistors are designed for general purpose amplifierS-LBC857ATT1Gapplications. They are housed in the SC-89 package which is designed Seriesfor low power surface mount applications.Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri

 7.1. Size:159K  lrc
lbc856alt3g lbc856blt3g lbc857alt1g lbc857blt3g lbc857clt1g lbc858alt1g lbc858blt3g lbc858clt3g lbc859blt1g lbc859clt3g.pdf

LBC857ATT1G
LBC857ATT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

 7.2. Size:234K  lrc
lbc856alt1g lbc856blt1g lbc857alt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc857clt1g lbc858alt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859blt1g lbc859clt1g.pdf

LBC857ATT1G
LBC857ATT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

 7.3. Size:234K  lrc
lbc856alt1g lbc856alt3g lbc856blt1g lbc856blt3g lbc857alt1g lbc857alt1g lbc857blt1g lbc857blt3g lbc857clt1g lbc857clt1g.pdf

LBC857ATT1G
LBC857ATT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

 7.4. Size:158K  lrc
lbc856alt1g lbc856blt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859clt1g.pdf

LBC857ATT1G
LBC857ATT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1Unique Sit

 7.5. Size:254K  lrc
lbc856awt1g lbc856bwt1g lbc857awt1g lbc857bwt1g lbc857cwt1g lbc858awt1g lbc858bwt1g lbc858cwt1g.pdf

LBC857ATT1G
LBC857ATT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountCWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesWe declare that the material of product

 7.6. Size:284K  lrc
lbc857awt1g.pdf

LBC857ATT1G
LBC857ATT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconCWT1GThese transistors are designed for general purposeLBC858AWT1G, BWT1Gamplifier applications. They are housed in the SOT323/SC70 which is designed for low power surface mount CWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesS-LBC857AWT1G, BWT1GWe declare that the

 7.7. Size:159K  lrc
lbc857alt1g.pdf

LBC857ATT1G
LBC857ATT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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