LBC857ATT1G datasheet, аналоги, основные параметры
Наименование производителя: LBC857ATT1G
Маркировка: 3E
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 4.5 pf
Статический коэффициент передачи тока (hFE): 125
Корпус транзистора: SC-89
Аналоги (замена) для LBC857ATT1G
- подборⓘ биполярного транзистора по параметрам
LBC857ATT1G даташит
lbc857att1g lbc857btt1g lbc857ctt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857ATT1G PNP Silicon Series These transistors are designed for general purpose amplifier S-LBC857ATT1G applications. They are housed in the SC-89 package which is designed Series for low power surface mount applications. Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch
Другие транзисторы: LBC849BLT3G, LBC849CLT1G, LBC849CLT3G, LBC850BLT3G, LBC850CLT3G, LBC856ADW1T1G, LBC856ALT3G, LBC856BLT3G, NJW0281G, LBC857BLT3G, LBC857CTT1G, LBC858BLT3G, LBC858CLT3G, LBC859BLT1G, LBC859CLT1G, LBC859CLT3G, LBSS4240LT3G
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