LBC857CTT1G Todos los transistores

 

LBC857CTT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: LBC857CTT1G
   Código: 3G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 420
   Paquete / Cubierta: SC-89
 

 Búsqueda de reemplazo de LBC857CTT1G

   - Selección ⓘ de transistores por parámetros

 

LBC857CTT1G datasheet

 ..1. Size:135K  lrc
lbc857att1g lbc857btt1g lbc857ctt1g.pdf pdf_icon

LBC857CTT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857ATT1G PNP Silicon Series These transistors are designed for general purpose amplifier S-LBC857ATT1G applications. They are housed in the SC-89 package which is designed Series for low power surface mount applications. Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri... See More ⇒

 7.1. Size:159K  lrc
lbc856alt3g lbc856blt3g lbc857alt1g lbc857blt3g lbc857clt1g lbc858alt1g lbc858blt3g lbc858clt3g lbc859blt1g lbc859clt3g.pdf pdf_icon

LBC857CTT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a... See More ⇒

 7.2. Size:234K  lrc
lbc856alt1g lbc856blt1g lbc857alt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc857clt1g lbc858alt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859blt1g lbc859clt1g.pdf pdf_icon

LBC857CTT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch... See More ⇒

 7.3. Size:176K  lrc
lbc857cdw1t1g.pdf pdf_icon

LBC857CTT1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G 6 5 These transistors are designed for general purpose amplifier 4 applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 1 We declare that the material of product compliance with RoHS requirements. 2 3 S- Prefix for Automotive an... See More ⇒

Otros transistores... LBC849CLT3G , LBC850BLT3G , LBC850CLT3G , LBC856ADW1T1G , LBC856ALT3G , LBC856BLT3G , LBC857ATT1G , LBC857BLT3G , 2SD669A , LBC858BLT3G , LBC858CLT3G , LBC859BLT1G , LBC859CLT1G , LBC859CLT3G , LBSS4240LT3G , LBSS4250Y3T1G , LBSS4350SY3T1G .

 

 
Back to Top

 


 
.