LBC857CTT1G Datasheet. Specs and Replacement

Type Designator: LBC857CTT1G

SMD Transistor Code: 3G

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 420

Noise Figure, dB: -

Package: SC-89

 LBC857CTT1G Substitution

- BJT ⓘ Cross-Reference Search

 

LBC857CTT1G datasheet

 ..1. Size:135K  lrc

lbc857att1g lbc857btt1g lbc857ctt1g.pdf pdf_icon

LBC857CTT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857ATT1G PNP Silicon Series These transistors are designed for general purpose amplifier S-LBC857ATT1G applications. They are housed in the SC-89 package which is designed Series for low power surface mount applications. Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri... See More ⇒

 7.1. Size:159K  lrc

lbc856alt3g lbc856blt3g lbc857alt1g lbc857blt3g lbc857clt1g lbc858alt1g lbc858blt3g lbc858clt3g lbc859blt1g lbc859clt3g.pdf pdf_icon

LBC857CTT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC857CLT1G PNP Silicon Series S-LBC857CLT1G Moisture Sensitivity Level 1 Series ESD Rating Human Body Model >4000 V ESD Rating Machine Model >400 V We declare that the material of product compliance with 3 RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a... See More ⇒

 7.2. Size:234K  lrc

lbc856alt1g lbc856blt1g lbc857alt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc857clt1g lbc858alt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859blt1g lbc859clt1g.pdf pdf_icon

LBC857CTT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Moisture Sensitivity Level 1 ESD Rating Human Body Model >4000 V LBC857CLT1G ESD Rating Machine Model >400 V S-LBC857CLT1G We declare that the material of product compliance with Series RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Ch... See More ⇒

 7.3. Size:176K  lrc

lbc857cdw1t1g.pdf pdf_icon

LBC857CTT1G

LESHAN RADIO COMPANY, LTD. Dual General Purpose LBC85** DW1T1G Transistors S-LBC85** DW1T1G 6 5 These transistors are designed for general purpose amplifier 4 applications. They are housed in the SOT 363/SC 88 which is designed for low power surface mount applications. 1 We declare that the material of product compliance with RoHS requirements. 2 3 S- Prefix for Automotive an... See More ⇒

Detailed specifications: LBC849CLT3G, LBC850BLT3G, LBC850CLT3G, LBC856ADW1T1G, LBC856ALT3G, LBC856BLT3G, LBC857ATT1G, LBC857BLT3G, 2SD669A, LBC858BLT3G, LBC858CLT3G, LBC859BLT1G, LBC859CLT1G, LBC859CLT3G, LBSS4240LT3G, LBSS4250Y3T1G, LBSS4350SY3T1G

Keywords - LBC857CTT1G pdf specs

 LBC857CTT1G cross reference

 LBC857CTT1G equivalent finder

 LBC857CTT1G pdf lookup

 LBC857CTT1G substitution

 LBC857CTT1G replacement