All Transistors. LBC857CTT1G Datasheet

 

LBC857CTT1G Datasheet and Replacement


   Type Designator: LBC857CTT1G
   SMD Transistor Code: 3G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 420
   Noise Figure, dB: -
   Package: SC-89
 

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LBC857CTT1G Datasheet (PDF)

 ..1. Size:135K  lrc
lbc857att1g lbc857btt1g lbc857ctt1g.pdf pdf_icon

LBC857CTT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857ATT1GPNP Silicon SeriesThese transistors are designed for general purpose amplifierS-LBC857ATT1Gapplications. They are housed in the SC-89 package which is designed Seriesfor low power surface mount applications.Features Pb-Free Packages are Available S- Prefix for Automotive and Other Applications Requiri

 7.1. Size:159K  lrc
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LBC857CTT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

 7.2. Size:234K  lrc
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LBC857CTT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

 7.3. Size:176K  lrc
lbc857cdw1t1g.pdf pdf_icon

LBC857CTT1G

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1G65These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.1We declare that the material of product compliance with RoHS requirements.23S- Prefix for Automotive an

Datasheet: LBC849CLT3G , LBC850BLT3G , LBC850CLT3G , LBC856ADW1T1G , LBC856ALT3G , LBC856BLT3G , LBC857ATT1G , LBC857BLT3G , TIP2955 , LBC858BLT3G , LBC858CLT3G , LBC859BLT1G , LBC859CLT1G , LBC859CLT3G , LBSS4240LT3G , LBSS4250Y3T1G , LBSS4350SY3T1G .

History: DRA3123J | MJE15034 | DMG9640T | BC849ALT1 | BFP182T | BC848CWT1G | KRC418V

Keywords - LBC857CTT1G transistor datasheet

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