LBSS4250Y3T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LBSS4250Y3T1G
Código: G
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.55 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 360 MHz
Capacitancia de salida (Cc): 12 pF
Ganancia de corriente contínua (hfe): 180
Paquete / Cubierta: SOT89
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LBSS4250Y3T1G Datasheet (PDF)
lbss4250y3t1g.pdf
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LBSS4250Y3T1GS-LBSS4250Y3T1G1NPN 2.0A 50V Middle Power Transistor231. FEATURESSuitable for Middle Power DriverSOT89Complementary NPN TypesLow VCE(sat)We declare that the material of product compliance with2 RoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring1unique site and control change requireme
lbss4240lt1g.pdf
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LESHAN RADIO COMPANY, LTD.General Purpose Transistors40V,2A Low VCE(sat) NPN SiliconFEATURES Low collector-emitter saturation voltage High current capability Improved device reliability due to reduced heat generation LBSS4240LT1G Replacement for SOT89/SOT223 standard packaged S-LBSS4240LT1G transistors.3 We declare that the material of product complian
lbss4240lt1g lbss4240lt3g.pdf
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LBSS4240LT1GS-LBSS4240LT1GGeneral Purpose Transistors NPN Silicon1. FEATURESLow collector-emitter saturation voltageHigh current capabilityImproved device reliability due to reduced heat generationWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiringSOT23
lbss4350sy3t1g.pdf
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LBSS4350SY3T1GS-LBSS4350SY3T1GNPN TRANSISTOR121. FEATURES3Low collector-to-emitter saturation voltage.Fast switching speed.SOT89Large current capacity and wide ASO.We declare that the material of product compliance with RoHS requirements and Halogen Free.2S- prefix for automotive and other applications requiringunique site and control chang
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