LDTA123EET1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LDTA123EET1G
Código: 6H
Material: Si
Polaridad de transistor: PNP
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 2.2 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta: SC89
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LDTA123EET1G datasheet
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LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTC114EET1G Series S-LDTC114EET1G Series NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network cons
Otros transistores... LBTN180Y3T1G , LBTN180Z4TZHG , LBTP180Y3T1G , LBTP460Z4TZHG , LDTA114EET1G , LDTA114TET1G , LDTA114YET1G , LDTA115EET1G , TIP120 , LDTA123JET1G , LDTA124EET1G , LDTA124XET1G , LDTA143EET1G , LDTA143TET1G , LDTA143ZET1G , LDTA144EET1G , LDTA144WET1G .
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