Биполярный транзистор LDTA123EET1G - описание производителя. Основные параметры. Даташиты.
Наименование производителя: LDTA123EET1G
Маркировка: 6H
Тип материала: Si
Полярность: PNP
Встроенный резистор цепи смещения R1 = 2.2 kOhm
Встроенный резистор цепи смещения R2 = 2.2 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 8
Корпус транзистора: SC89
Аналоги (замена) для LDTA123EET1G
LDTA123EET1G Datasheet (PDF)
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History: 2N1358A
History: 2N1358A
Список транзисторов
Обновления
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