LMBT3906TT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LMBT3906TT3G
Código: 2A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Capacitancia de salida (Cc): 4.5 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SC89
Búsqueda de reemplazo de transistor bipolar LMBT3906TT3G
LMBT3906TT3G Datasheet (PDF)
lmbt3906tt1g lmbt3906tt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE Simplifies Circuit Design. We declare that the material of product compliance with RoHS requirements.LMBT3906TT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT3906TT1GORDERING INFORMATIONDevice Mark
lmbt3906tt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconFEATURE Simplifies Circuit Design. We declare that the material of product compliance with RoHS requirements.LMBT3906TT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT3906TT1GORDERING INFORMATIONDevice Mark
lmbt3906n3t5g.pdf
LMBT3906N3T5G3S-LMBT3906N3T5G1General Purpose Transistors PNP Silicon21. FEATURES We declare that the material of product compliance withSOT883RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. COLLECTOR32. DEVICE MARKING AND ORDERING INF
lmbt3906lt1g lmbt3906lt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon We declare that the material of product compliance with RoHS requirements.LMBT3906LT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT3906LT1GORDERING INFORMATION3Device Marking ShippingLMBT3906LT1G 2A3000
lmbt3906wt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLMBT3906WT1GFEATURESS-LMBT3906WT1G1) We declare that the material of product compliant withRoHS requirements and Halogen Free.2) S- Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12DEVICE MARKING AND ORDERING I
lmbt3906dw1t1g.pdf
LESHAN RADIO COMPANY, LTD.Dual Bias ResistorLMBT3906DW1T1GTransistor654The LMBT3906DW1T1 device isa spinoff of our popularSOT23/SOT323 threeleaded device. It is designed for generalpurpose amplifier applications and is housed in the SOT3631sixleaded surface mount package. By putting two discrete devices in23one package, this device is ideal for low
lmbt3906lt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP SiliconLMBT3906LT1GS-LMBT3906LT1GFEATURES1) We declare that the material of product compliant with3RoHS requirements and Halogen Free.2) S- Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12DEVICE MARKING AND ORDERING I
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