LMBTA43LT3G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: LMBTA43LT3G

Código: M1E

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.225 W

Tensión colector-base (Vcb): 200 V

Tensión colector-emisor (Vce): 200 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 50 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hFE): 40

Encapsulados: SOT23

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LMBTA43LT3G datasheet

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 lmbta42lt1g lmbta42lt3g lmbta43lt1g lmbta43lt3g.pdf pdf_icon

LMBTA43LT3G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors We declare that the material of product compliance with RoHS requirements. LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1G Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LMBTA42LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping S-LMB

 5.1. Size:390K  lrc
 lmbta42lt1g lmbta43lt1g.pdf pdf_icon

LMBTA43LT3G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors We declare that the material of product compliance with RoHS requirements. LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1G Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LMBTA42LT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping S-LMB

 5.2. Size:98K  lrc
 lmbta43lt1g.pdf pdf_icon

LMBTA43LT3G

LESHAN RADIO COMPANY, LTD. High Voltage Transistors We declare that the material of product compliance with RoHS requirements. LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and LMBTA43LT1G PPAP Capable. S-LMBTA42LT1G DEVICE MARKING AND ORDERING INFORMATION S-LMBTA43LT1G Device Marking P

 8.1. Size:94K  lrc
 lmbta44lt1g.pdf pdf_icon

LMBTA43LT3G

LESHAN RADIO COMPANY, LTD. LMBTA44LT1G LMBTA44LT1G S-LMBTA44LT1G NPN EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. 3 Description The LMBTA44LT1G is designed for application 1 that requires high voltage. 2 Features High Breakdown Voltage VCEO=400(Min.) at IC=1mA SOT 23 Complementary to LMBTA94LT1G S- Prefix

MOSTRAR MÁS

Otros transistores... LMBT5550LT1G, LMBT5550LT3G, LMBT5551DW1T3G, LMBT5551LT3G, LMBT6428LT3G, LMBT6517LT3G, LMBT6520LT3G, LMBTA42LT3G, 2SC1815, LMBTA56LT3G, LMBTA92LT3G, LMBTA93LT1G, LMBTA93LT3G, LMBTH10LT3G, SL9013SLT3G, 2SA1012B, 3DD13001B