All Transistors. LMBTA43LT3G Datasheet

 

LMBTA43LT3G Datasheet and Replacement


   Type Designator: LMBTA43LT3G
   SMD Transistor Code: M1E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 200 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: SOT23
 

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LMBTA43LT3G Datasheet (PDF)

 ..1. Size:390K  lrc
 lmbta42lt1g lmbta42lt3g lmbta43lt1g lmbta43lt3g.pdf pdf_icon

LMBTA43LT3G

LESHAN RADIO COMPANY, LTD.High Voltage Transistors We declare that the material of productcompliance with RoHS requirements.LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1GSite and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA42LT1GDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Package Shipping S-LMB

 5.1. Size:390K  lrc
 lmbta42lt1g lmbta43lt1g.pdf pdf_icon

LMBTA43LT3G

LESHAN RADIO COMPANY, LTD.High Voltage Transistors We declare that the material of productcompliance with RoHS requirements.LMBTA42LT1G S- Prefix for Automotive and Other Applications Requiring Unique LMBTA43LT1GSite and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBTA42LT1GDEVICE MARKING AND ORDERING INFORMATIONDevice Marking Package Shipping S-LMB

 5.2. Size:98K  lrc
 lmbta43lt1g.pdf pdf_icon

LMBTA43LT3G

LESHAN RADIO COMPANY, LTD.High Voltage TransistorsWe declare that the material of product compliance with RoHS requirements.LMBTA42LT1GS- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and LMBTA43LT1GPPAP Capable.S-LMBTA42LT1GDEVICE MARKING AND ORDERING INFORMATIONS-LMBTA43LT1GDevice Marking P

 8.1. Size:94K  lrc
 lmbta44lt1g.pdf pdf_icon

LMBTA43LT3G

LESHAN RADIO COMPANY, LTD.LMBTA44LT1G LMBTA44LT1GS-LMBTA44LT1GNPN EPITAXIAL PLANAR TRANSISTORWe declare that the material of productcompliance with RoHS requirements.3DescriptionThe LMBTA44LT1G is designed for application 1that requires high voltage.2Features High Breakdown Voltage: VCEO=400(Min.) at IC=1mASOT 23 Complementary to LMBTA94LT1G S- Prefix

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Datasheet: LMBT5550LT1G , LMBT5550LT3G , LMBT5551DW1T3G , LMBT5551LT3G , LMBT6428LT3G , LMBT6517LT3G , LMBT6520LT3G , LMBTA42LT3G , 2N2222A , LMBTA56LT3G , LMBTA92LT3G , LMBTA93LT1G , LMBTA93LT3G , LMBTH10LT3G , SL9013SLT3G , 2SA1012B , 3DD13001B .

Keywords - LMBTA43LT3G transistor datasheet

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