LMBTA92LT3G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: LMBTA92LT3G
Código: 2D
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.225 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar LMBTA92LT3G
LMBTA92LT3G Datasheet (PDF)
lmbta92lt1g lmbta92lt3g lmbta93lt1g lmbta93lt3g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBTA92LT1GFEATURELMBTA93LT1G High voltage.S-LMBTA92LT1G For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements.S-LMBTA93LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme
lmbta92lt1g lmbta93lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBTA92LT1GFEATURELMBTA93LT1G High voltage.S-LMBTA92LT1G For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements.S-LMBTA93LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme
lmbta92lt1g.pdf
LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBTA92LT1GFEATURELMBTA93LT1G High voltage.S-LMBTA92LT1G For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements.S-LMBTA93LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme
lmbta94lt1g.pdf
LESHAN RADIO COMPANY, LTD.LMBTA94LT1GLMBTA94LT1GS-LMBTA94LT1GPNP EPITAXIAL PLANAR TRANSISTORWe declare that the material of product3compliance with RoHS requirements.Description1The LMBTA94LT1G is designed for application 2that requires high voltage.SOT 23Features High Breakdown Voltage: VCEO=400(Min.) at IC=1mA Complementary to LMBTA94LT1GCOLLECTOR
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS