Биполярный транзистор LMBTA92LT3G Даташит. Аналоги
Наименование производителя: LMBTA92LT3G
Маркировка: 2D
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.225 W
Макcимально допустимое напряжение коллектор-база (Ucb): 300 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 50 MHz
Ёмкость коллекторного перехода (Cc): 6 pf
Статический коэффициент передачи тока (hfe): 25
Корпус транзистора: SOT23
Аналог (замена) для LMBTA92LT3G
LMBTA92LT3G Datasheet (PDF)
lmbta92lt1g lmbta92lt3g lmbta93lt1g lmbta93lt3g.pdf

LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBTA92LT1GFEATURELMBTA93LT1G High voltage.S-LMBTA92LT1G For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements.S-LMBTA93LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme
lmbta92lt1g lmbta93lt1g.pdf

LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBTA92LT1GFEATURELMBTA93LT1G High voltage.S-LMBTA92LT1G For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements.S-LMBTA93LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme
lmbta92lt1g.pdf

LESHAN RADIO COMPANY, LTD.High Voltage TransistorPNP SiliconLMBTA92LT1GFEATURELMBTA93LT1G High voltage.S-LMBTA92LT1G For Telephony or Professional communication equipment applications. We declare that the material of product compliance with RoHS requirements.S-LMBTA93LT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requireme
lmbta94lt1g.pdf

LESHAN RADIO COMPANY, LTD.LMBTA94LT1GLMBTA94LT1GS-LMBTA94LT1GPNP EPITAXIAL PLANAR TRANSISTORWe declare that the material of product3compliance with RoHS requirements.Description1The LMBTA94LT1G is designed for application 2that requires high voltage.SOT 23Features High Breakdown Voltage: VCEO=400(Min.) at IC=1mA Complementary to LMBTA94LT1GCOLLECTOR
Другие транзисторы... LMBT5551DW1T3G , LMBT5551LT3G , LMBT6428LT3G , LMBT6517LT3G , LMBT6520LT3G , LMBTA42LT3G , LMBTA43LT3G , LMBTA56LT3G , B772 , LMBTA93LT1G , LMBTA93LT3G , LMBTH10LT3G , SL9013SLT3G , 2SA1012B , 3DD13001B , 3DD13003N3 , 3DD13005ND66 .
History: KT505A | 2N5580 | CP504 | UN2215Q
History: KT505A | 2N5580 | CP504 | UN2215Q



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BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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