AD-MMBT5551 Todos los transistores

 

AD-MMBT5551 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AD-MMBT5551
   Código: G1
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 180 V
   Tensión colector-emisor (Vce): 160 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar AD-MMBT5551

 

AD-MMBT5551 Datasheet (PDF)

 ..1. Size:651K  jiangsu
ad-mmbt5551.pdf

AD-MMBT5551 AD-MMBT5551

www.jscj-elec.com AD-MMBT5551 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBT5551 Series Plastic-Encapsulated Transistor AD-MMBT5551 series Transistor (NPN) FEATURES Complementary to AD-MMBT5401 series Ideal for medium power amplification and switching AEC-Q101 qualified MARKING G1 = Device code G1 EQUIVALENT CIRCUIT 3 1 2 Versio

 6.1. Size:640K  jiangsu
ad-mmbt5401.pdf

AD-MMBT5551 AD-MMBT5551

www.jscj-elec.com AD-MMBT5401 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBT5401 series Plastic-Encapsulated Transistor AD-MMBT5401 series Transistor (PNP) FEATURES Complementary to AD-MMBT5551 series For medium power amplification and switching AEC-Q101 qualified MARKING 2L = Device code 2L Version 1.0 1 / 6 2021-07-01 www.jscj-elec

 7.1. Size:627K  jiangsu
ad-mmbta56.pdf

AD-MMBT5551 AD-MMBT5551

www.jscj-elec.com AD-MMBTA56 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBTA56 Plastic-Encapsulated Transistor AD-MMBTA56 Transistor (PNP) FEATURES General purpose amplifier applications AEC-Q101 qualified MARKING 2GM = Device code 2GM Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-MMBTA56 MAXIMUM RATINGS (T = 25C unless otherwise specifie

 7.2. Size:645K  jiangsu
ad-mmbta28.pdf

AD-MMBT5551 AD-MMBT5551

www.jscj-elec.com AD-MMBTA28 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBTA28 Plastic-Encapsulated Transistor AD-MMBTA28 Transistor (NPN) FEATURES High current gain AEC-Q101 qualified MARKING 3SS = Device code 3SS EQUIVALENT CIRCUIT 3 1 2 Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-MMBTA28 MAXIMUM RATINGS (T = 25C unless otherw

 7.3. Size:652K  jiangsu
ad-mmbt3906.pdf

AD-MMBT5551 AD-MMBT5551

www.jscj-elec.com AD-MMBT3906 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBT3906 series Plastic-Encapsulated Transistor AD-MMBT3906 series Transistor (PNP) FEATURES Complementary to AD-MMBT3904 series AEC-Q101 qualified MARKING 2A = Device code 2A X X = Date code Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-MMBT3906 series MAXIM

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History: BC146-1 | 2N84A

 

 
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History: BC146-1 | 2N84A

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