MMDT9014 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMDT9014
Código: TGL6
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 3.5 pF
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta: SOT363
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MMDT9014 Datasheet (PDF)
mmdt9014.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate TransistorsMMDT9014 DUAL TRANSISTOR (NPN+NPN)SOT-363 FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT9015) Ideal for Medium Power Amplification and SwitchingMARKING:TGL6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-
mmdt9014dw.pdf

Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN)6FEATURES54 Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT9015 )DW12 Ideal for Medium Power Amplification and Switching3MARKING:TGL6MAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit VCBO Collector- Base Voltage 50 V VCEO Collector-Emitter Voltag
mmdt9015.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate TransistorsSOT-363 MMDT9015 TRANSISTOR (PNP)FEATURES Complementary to MMDT9014MARKING: TGM6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V V Collector-Emitter Voltage -45 V CEOV Emitter-Base Voltage -5 V EBOI Collector Curr
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .



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