MMDT9014 Datasheet. Specs and Replacement
Type Designator: MMDT9014
SMD Transistor Code: TGL6
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Package: SOT363
MMDT9014 Substitution
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MMDT9014 datasheet
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT9014 DUAL TRANSISTOR (NPN+NPN) SOT-363 FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT9015) Ideal for Medium Power Amplification and Switching MARKING TGL6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector- ... See More ⇒
Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN) 6 FEATURES 5 4 Epitaxial Planar Die Construction Complementary PNP Type Available(MMDT9015 ) DW 1 2 Ideal for Medium Power Amplification and Switching 3 MARKING TGL6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector- Base Voltage 50 V VCEO Collector-Emitter Voltag... See More ⇒
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors SOT-363 MMDT9015 TRANSISTOR (PNP) FEATURES Complementary to MMDT9014 MARKING TGM6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V V Collector-Emitter Voltage -45 V CEO V Emitter-Base Voltage -5 V EBO I Collector Curr... See More ⇒
Detailed specifications: AD-MMBT5551, AD-MMBTA28, AD-MMBTA56, AD-SS8550-L, AD-SS8550-H, AD-SS8550-J, CJ2045, MMBT2222AM, S9018, MMDT9015, TK3904LED03, S8550L, S8550H, JZT955, 2SC3356-R25, 2SB772SQ, 2SD882SQ
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