H8550D Datasheet. Equivalente

 ..1. Size:848K  kexin
 h8550d.pdf

SMD Type Transistors PNP Transistors H8550D Features 1.70 0.1 Collector Power Dissipation PC=0.5W Collector Current IC=-1.5A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -5 V Collector current IC -1

 9.1. Size:138K  lrc
 lh8550plt1g lh8550plt3g lh8550qlt1g lh8550qlt3g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8550PLT1G PNP Silicon Series FEATURE S-LH8550PLT1G High current capacity in compact package. Series IC =-1.5A. Epitaxial planar type. PNP complement LH8550 3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements; AEC-Q101 Qualified and

 9.2. Size:138K  lrc
 lh8550qlt1g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8550PLT1G PNP Silicon Series FEATURE S-LH8550PLT1G High current capacity in compact package. Series IC =-1.5A. Epitaxial planar type. PNP complement LH8550 3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements; AEC-Q101 Qualified and

 9.3. Size:138K  lrc
 lh8550plt1g lh8550qlt1g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8550PLT1G PNP Silicon Series FEATURE S-LH8550PLT1G High current capacity in compact package. Series IC =-1.5A. Epitaxial planar type. PNP complement LH8550 3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements; AEC-Q101 Qualified and

 9.4. Size:157K  lrc
 lh8550plt1g.pdf

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LH8550PLT1G PNP Silicon Series FEATURE S-LH8550PLT1G High current capacity in compact package. Series IC =-1.5A. Epitaxial planar type. PNP complement LH8550 3 Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique 1 Site and Control Change Requirements; AEC-Q101 Qualified and

 9.5. Size:138K  shantou-huashan
 h8550.pdf

Shantou Huashan Electronic Devices Co.,Ltd. H8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 TO-92 Tj Junction Temperature 150 PC Collector Dissipation

 9.6. Size:127K  shantou-huashan
 h8550s.pdf

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H8550S APPLICATIONS Audio Frequency Amplifier. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 TO-92 Tj Juncttion Temperature 150 PC Collector Dissipation

 9.7. Size:796K  kexin
 h8550.pdf

SMD Type Transistors PNP Transistors H8550 Features 1.70 0.1 Collector Power Dissipation PC=0.5W Collector Current IC=-1.5A Comlementary to H8050 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter voltage VCEO -25 V Emitter-base voltage VEBO -