KST8550D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KST8550D
Código: Y2
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar KST8550D
KST8550D Datasheet (PDF)
kst8550d.pdf
SMD Type TransistorsSMD TypePNP Transistors KST8550DSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13Features1 2Collector Current: IC=-1.5A+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage
kst8550d-50.pdf
SMD Type TransistorsSMD TypePNP TransistorsKST8550D-50SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13Features Collector Current Capability IC=-1.2A Collector Emitter Voltage VCEO=-50V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -50 VC
kst8550s.pdf
SMD Type TransistorsSMD TypePNP TransistorsKST8550SSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesCollector current: IC-=0.5A1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage V
kst8550.pdf
SMD Type TransistorsSMD TypePNP TransistorsKST8550SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13FeaturesCollector Current: IC=-1.5A1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Voltage VEB
kst8550x.pdf
SMD Type TransistorsPNP TransistorsKST8550XSOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Power Dissipation: PC=0.3W Collector Current: IC=-1.5A1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emit
kst8550m.pdf
SMD TypeSMD Type TransistorsPNP TransistorsKST8550MSOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current: IC=-0.8A1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-
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