2N5550BU . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N5550/DAmplifier Transistors2N5550NPN Silicon*2N5551*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSRating Symbol 2N5550 2N5551 UnitCASE 2904, STYLE 1TO92 (TO226AA)CollectorEmitter Voltage VCEO 140 160 VdcCollectorBase Voltage VCBO 160 180 VdcEmitterB

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5550; 2N5551NPN high-voltage transistorsProduct specification 2004 Oct 28Supersedes data of 1999 Apr 23Philips Semiconductors Product specificationNPN high-voltage transistors 2N5550; 2N5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 collector2 baseAPPLICATIONS

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N5550; 2N5551NPN high-voltage transistors1999 Apr 23Product specificationSupersedes data of 1997 Apr 09Philips Semiconductors Product specificationNPN high-voltage transistors 2N5550; 2N5551FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 160 V).1 collector2 baseAPPLICATION

AmpIifier Transistor Collector-Emitter Voltage: VCEO= 140V Collector Dissipation: PC (max)=625mWTO-92 1. Emitter 2. Base 3. CollectorNPN EpitaxiaI SiIicon TransistorAbsoIute Maximum Ratings Ta=25C unless otherwise noted SymboI Parameter VaIue UnitsVCBO Collector-Base Voltage 160 VVCEO Collector-Emitter Voltage 140 VVEBO Emitter-Base Voltage 6 VIC

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2N5550, 2N5551Preferred DeviceAmplifier TransistorsNPN SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO Vdc2N5550 14012N5551 160EMITTERCollector - Base Voltage VCBO Vdc2N5550 1602N5551 180Emitter - Base Voltage VEBO 6.0 VdcTO-92CASE 29Collector Curr

2N5550, 2N5551Preferred DeviceAmplifier TransistorsNPN SiliconFeatures These are Pb-Free Devices*http://onsemi.comCOLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO Vdc2N5550 14012N5551 160EMITTERCollector - Base Voltage VCBO Vdc2N5550 1602N5551 180Emitter - Base Voltage VEBO 6.0 VdcTO-92CASE 29Collector Curr

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

2N5550 0.6 A, 160 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES Switching and amplification in high voltage TO-92 Applications such as telephony Low current(max.600mA) High voltage(max.160V) G HJMillimeter REF. A DMin. Max. A 4.40 4.70 Collector B

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTOR 2N5550 TO-92 Plastic PackageHigh Voltage NPN Transistor For General Purpose and Telephony Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25C unless specified otherwise)DESCRIPTION SYMBOL VALUE UNITSVCEOCollector Emitter Voltage 140 VVCBO

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2N5550 TRANSISTOR (NPN)TO-92 FEATURES Switching and mplification in igh oltage1.EMITTER Applications such as elephony Low urrent( ax. 600mA)2.BASE High oltage( ax.160V)3.COLLECTOR Equivalent Circuit 2N5550=Device code 2N Solid dot=Green molding compound device

SEMICONDUCTOR 2N5550TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.HIGH VOLTAGE APPLICATION.B CFEATURES High Collector Breakdwon VoltageN DIM MILLIMETERS: VCBO=160V, VCEO=140VA 4.70 MAXEKLow Leakage Current. B 4.80 MAXGC 3.70 MAXD: ICBO=100nA(Max.), VCB=100VD 0.45E 1.00Low Saturation VoltageF 1.27G 0.85: VCE(sat)=0.25V(Max.)

SEMICONDUCTOR 2N5550STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.EL B LDIM MILLIMETERSFEATURES _+2.93 0.20AB 1.30+0.20/-0.15High Collector Breakdwon VoltageC 1.30 MAX2: VCBO=160V, VCEO=140V 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20Low Leakage Current.1G 1.90H 0.95: ICBO=100nA(Max.) VCB=100VJ 0.13+0.

2N5550(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160V) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 160 V V

2N5550 / 2N5551 NPN Silicon Epitaxial Planar Transistors for general purpose, high voltage amplifier applications. As complementary types the PNP transistors 2N5400 and 2N5401 are recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C)

SEMICONDUCTOR 2N5550S TECHNICAL DATA 2N5551S High Voltage Transistors FEATURE Pb-Free package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping F0 3000/Tape&Reel2N5550S3 F1 3000/Tape&Reel2N5551S1 MAXIMUM RATINGS 2 Rating Symbol Value Unit CollectorEmitter Voltage V CEO 140 Vdc SOT23 CollectorBase Voltage V CBO 160 Vdc