BC33716BU Datasheet. Equivalente

 ..1. Size:1345K  onsemi
 bc33716bu bc33716ta bc33716tfr bc33725bu bc33725ta bc33725tar bc33725tf bc33725tfr bc33740bu bc33740ta bc33825ta.pdf

 9.1. Size:119K  motorola
 bc337 bc338.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC337/D Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol BC337 BC338 Unit CASE 29 04, STYLE 17 Collector Emitter Voltage VCEO 45 25 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 50 30 Vdc Emitter Base Voltage VEB

 9.2. Size:52K  philips
 bc337 3.pdf

 9.3. Size:236K  philips
 bc817 bc817w bc337.pdf

BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 06 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1. Product overview Type number Package PNP complement NXP JEITA BC817 SOT23 - BC807 BC817W SOT323 SC-70 BC807W BC337[1] SOT54 (TO-92) SC-43A BC327 [1] Also available in SOT54A and SOT54 va

 9.4. Size:66K  st
 bc337-25 bc337-40.pdf

BC337-25 BC337-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Ordering Code Marking Package / Shipment BC337-25 BC337-25 TO-92 / Bulk BC337-25-AP BC337-25 TO-92 / Ammopack BC337-40 BC337-40 TO-92 / Bulk BC337-40-AP BC337-40 TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTORS TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY TO-92 TO-92 THE PNP COMPLEMENTARY TYPES

 9.5. Size:15K  fairchild semi
 bc337-16 bc337-25.pdf

BC337-16 BC337-25 E TO-92 B C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage

 9.6. Size:27K  fairchild semi
 bc337 bc338.pdf

BC337/338 Switching and Amplifier Applications Suitable for AF-Driver stages and low power output stages Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage BC337 50 V BC338 30 V VCEO Collector-Emitter Volt

 9.7. Size:353K  nxp
 bc817 bc817-16 bc817-25 bc817-40 bc817w bc817-16w bc817-25w bc817-40w bc337 bc337-16 bc337-25 bc337-40.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.8. Size:179K  vishay
 bc337 338 1.pdf

BC337 and BC338 Vishay Semiconductors formerly General Semiconductor Small Signal Transistors (NPN) TO-226AA (TO-92) Features NPN Silicon Epitaxial Planar Transistors for switching 0.142 (3.6) 0.181 (4.6) and amplifier applications. Especially suited for AF-driver stages and low power output stages. These types are also available subdivided into three groups -16, -25, and -4

 9.9. Size:65K  central
 bc337-a bc338.pdf

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

 9.10. Size:88K  diodes
 bc337-16bk bc337-25bk bc337-40bk bc338-16bk bc338-25bk bc338-40bk.pdf

BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors NPN NPN Si-Epitaxial Planar-Transistoren f r universellen Einsatz Version 2010-05-27 0.1 Power dissipation 625 mW 4.6 Verlustleistung Plastic case TO-92 Kunststoffgeh use (10D3) Weight approx. Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 C B E Geh usematerial UL9

 9.11. Size:234K  mcc
 bc337-16-25-40 bc338-16-25-40.pdf

MCC BC337-16/25/40 TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components BC338-16/25/40 CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features NPN Capable of 0.625Watts of Power Dissipation. Collector-current 0.8A Plastic-Encapsulate Collector-base Voltage VCBO=50V(BC337) , VCBO=30V(BC338) Transistors Lead Free Fin

 9.12. Size:141K  onsemi
 bc337-25-40.pdf

 9.13. Size:192K  auk
 sbc337.pdf

SBC337 NPN Silicon Transistor Descriptions PIN Connection High current application C Switching application B Features Suitable for AF-Driver stage and low E power output stages Complementary pair with SBC327 TO-92 Ordering Information Type NO. Marking Package Code SBC337 SBC337 TO-92 Absolute maximum ratings (Ta=25 C) Characteristic Symbol R

 9.14. Size:362K  secos
 bc337~bc338.pdf

BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation 1Collector 1 1 1 2Base 2 2 2 J 3Emitter 3 3 3 CLASSIFICATION OF hFE A D Product-Rank BC337-16 BC337-25 BC337-40 Millimeter REF. B Min. Max. A 4.40 4.70 Product-Rank B

 9.15. Size:117K  cdil
 bc327 bc328 bc337 bc338.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BC327/A BC328 PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC337/A BC338 NPN TO-92 Plastic Package For Lead Free Parts, Device Part # will be Prefixed with "T" E B C General Purpose Transistors Best Suited for use in Driver and Output Stages of Audio Amplifier ABSOLUTE MAXIMUM RATINGS (Ta=25 C)

 9.16. Size:1381K  jiangsu
 bc337 bc338.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC337/BC338 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2.BASE Symbol Parameter Value Unit 3. EMITTER VCBO Collector-Base Voltage BC337 50 V BC338 30 VCEO Collector-Emitter Voltage BC337 45 V BC338 25 VE

 9.17. Size:338K  kec
 bc337.pdf

SEMICONDUCTOR BC337 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES High Current IC=800mA. DC Current Gain hFE=100 630 (VCE=1V, Ic=100mA). N DIM MILLIMETERS For Complementary with PNP type BC327. A 4.70 MAX E K G B 4.80 MAX C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.

 9.18. Size:172K  lge
 bc337 bc338.pdf

BC337/338(NPN) TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage BC337 50 V BC338 30 VCEO Collector-Emitter Voltage BC337 45 V BC338 25 Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Col

 9.19. Size:256K  wietron
 bc337 bc338.pdf

 9.20. Size:808K  blue-rocket-elect
 bc337m.pdf

BC337M(BR3DG337M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , BC327M(BR3CG327M) High current, complementary pair with BC327M(BR3CG327M). / Applications General power amplifier and switching.

 9.21. Size:1327K  blue-rocket-elect
 bc337.pdf

BC337 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92(R) NPN Silicon NPN transistor in a TO-92(R) Plastic Package. / Features , BC327 High current, complementary pair with BC327. / Applications General purpose application and switching. / Equival

 9.22. Size:78K  first silicon
 bc337 bc338.pdf

SEMICONDUCTOR BC337/338 TECHNICAL DATA BC337/BC338 TRANSISTOR (NPN) B C FEATURES High Current IC=800mA. DC Current Gain hFE=100 630 (VCE=1V, Ic=100mA). DIM MILLIMETERS For Complementary with PNP type BC327. A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 MAXIMUM RATINGS (Ta=25 unless otherwise noted) G 0.85 H 0.45 _ H J 14.00 + 0.50 L 2.30 Symb

 9.23. Size:856K  kexin
 bc337.pdf

DIP Type Transistors NPN Transistors BC337 (KC337) TO-92 Unit mm +0.25 4.58 0.15 Features Collector Current Capability IC=0.5A 0.46 0.10 Collector Emitter Voltage VCEO=45V C Complement to BC327. +0.10 1.27TYP 1.27TYP 0.38 0.05 1 2 3 B [1.27 0.20] [1.27 0.20] 3.60 0.20 E 1. Emitter 2. Base (R2.29) 3. Collector Absolute Maximum Ratings Ta = 25

 9.24. Size:191K  inchange semiconductor
 bc337.pdf

isc Silicon NPN Transistor BC337 DESCRIPTION Low Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For AF-Driver stages and low power output stages. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 45 V CEO V Emitter-Base Voltage 5 V EBO I Col