BC856BM3 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BC856BM3

Código: 3B

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.265 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 65 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 220

Encapsulados: SOT723

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BC856BM3 datasheet

 ..1. Size:160K  onsemi
 bc856bm3 nsvbc856bm3.pdf pdf_icon

BC856BM3

BC856BM3, NSVBC856BM3 General Purpose Transistor PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT-723 which is designed for low power surface mount applications. http //onsemi.com Features COLLECTOR NSV Prefix for Automotive and Other Applications Requiring 3 Unique Site and Control Change Requirements; AEC-Q101 Qualifie

 0.1. Size:57K  onsemi
 bc856bm3t5g.pdf pdf_icon

BC856BM3

EMT1DXV6 Dual General Purpose Transistor PNP Dual This transistor is designed for general purpose amplifier http //onsemi.com applications. It is housed in the SOT-563 which is designed for low power surface mount applications. (3) (2) (1) Features Lead-Free Solder Plating Low VCE(SAT), t0.5 V Q1 Q2 NSV Prefix for Automotive and Other Applications Requiring Unique Site

 0.2. Size:55K  onsemi
 bc856bm3t5g-d.pdf pdf_icon

BC856BM3

BC856BM3T5G Preferred Devices General Purpose Transistor PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT-723 which is designed for low power surface mount applications. http //onsemi.com This is a Pb-Free Device COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO -65 V Collecto

 7.1. Size:658K  nxp
 bc856bm.pdf pdf_icon

BC856BM3

BC856BM 60 V, 100 mA PNP general-purpose transistor 19 August 2015 Product data sheet 1. General description PNP general-purpose transistor in a leadless ultra small DFN1006-3 (SOT883) Surface- Mounted Device (SMD) plastic package. NPN complement BC846BM. 2. Features and benefits Leadless ultra small SMD plastic package Power dissipation comparable to SOT23 AEC-Q101 quali

MOSTRAR MÁS

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