Справочник транзисторов. BC856BM3

 

Биполярный транзистор BC856BM3 Даташит. Аналоги


   Наименование производителя: BC856BM3
   Маркировка: 3B
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.265 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 220
   Корпус транзистора: SOT723
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BC856BM3 Datasheet (PDF)

 ..1. Size:160K  onsemi
bc856bm3 nsvbc856bm3.pdfpdf_icon

BC856BM3

BC856BM3, NSVBC856BM3General Purpose TransistorPNP SiliconThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-723 which is designed for lowpower surface mount applications.http://onsemi.comFeaturesCOLLECTOR NSV Prefix for Automotive and Other Applications Requiring3Unique Site and Control Change Requirements; AEC-Q101Qualifie

 0.1. Size:57K  onsemi
bc856bm3t5g.pdfpdf_icon

BC856BM3

EMT1DXV6Dual General PurposeTransistorPNP DualThis transistor is designed for general purpose amplifierhttp://onsemi.comapplications. It is housed in the SOT-563 which is designed for lowpower surface mount applications.(3) (2) (1)Features Lead-Free Solder Plating Low VCE(SAT), t0.5 VQ1 Q2 NSV Prefix for Automotive and Other Applications RequiringUnique Site

 0.2. Size:55K  onsemi
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BC856BM3

BC856BM3T5GPreferred DevicesGeneral Purpose TransistorPNP SiliconThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-723 which is designed for lowpower surface mount applications.http://onsemi.com This is a Pb-Free DeviceCOLLECTORMAXIMUM RATINGS3Rating Symbol Value Unit1BASECollector-Emitter Voltage VCEO -65 VCollecto

 7.1. Size:658K  nxp
bc856bm.pdfpdf_icon

BC856BM3

BC856BM60 V, 100 mA PNP general-purpose transistor19 August 2015 Product data sheet1. General descriptionPNP general-purpose transistor in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package.NPN complement: BC846BM.2. Features and benefits Leadless ultra small SMD plastic package Power dissipation comparable to SOT23 AEC-Q101 quali

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History: TFN5177 | KSC1730Y | HA9531 | SRA2211E | CX917 | FK2369A | TI807

 

 
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