2SA122 Todos los transistores

 0.1. Size:136K  toshiba
 2sa1225.pdf

2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 100 MHz (typ.) Complementary to 2SC2983 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -160 V Emitter-

 0.2. Size:85K  nec
 2sa1221 2sa1222.pdf

DATA SHEET SILICON TRANSISTORS 2SA1221, 1222 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES PACKAGE DRAWING (UNIT mm) Ideal for use of high withstanding voltage current such as TV vertical deflection output, audio output, and variable power supplies. Complementary transistor with 2SC2958 and 2SC2959 VCEO = 140 V 2SA1221/2SC2958 VCEO = 160 V 2S

 0.3. Size:183K  nec
 2sa1226.pdf

 0.4. Size:30K  no
 2sa1227 2sa1227a 2sc2987a.pdf

 0.5. Size:35K  no
 2sa1220 2sa1220a 2sc2690a.pdf

 0.6. Size:1433K  jiangsu
 2sa1225.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA1225 TRANSISTOR (PNP) TO-252-2L FEATURES 1. BASE High Transition Frequency Complementary to 2SC2983 2. COLLECTOR 3 .EMITTER APPLICATIONS Power Amplifier Applications Driver Stage Amplifier Applications Equivalent Circuit A1225=Device code A1225 Solid dot=Gre

 0.7. Size:160K  jmnic
 2sa1227 2sa1227a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1227 2SA1227A DESCRIPTION With TO-3PFa package Complement to type 2SC2987/2987A High power dissipation APPLICATIONS For use in audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

 0.8. Size:189K  jmnic
 2sa1220 2sa1220a.pdf

JMnic Product Specification Silicon PNP Power Transistors 2SA1220 2SA1220A DESCRIPTION With TO-126 package Complement to type 2SC2690/2690A APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITION

 0.9. Size:916K  kexin
 2sa1226.pdf

SMD Type Transistors PNP Transistors 2SA1226 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-30mA 1 2 Collector Emitter Voltage VCEO=-40V +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Col

 0.10. Size:114K  inchange semiconductor
 2sa1227 2sa1227a.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1227 2SA1227A DESCRIPTION With TO-3PFa package Complement to type 2SC2987/2987A High power dissipation APPLICATIONS For use in audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDI

 0.11. Size:134K  inchange semiconductor
 2sa1220 a.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1220/A DESCRIPTION Good Linearity of hFE High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A Complement to Type 2SC2690/A APPLICATIONS Adudio frequency power amplifier High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 )

 0.12. Size:222K  inchange semiconductor
 2sa1227.pdf

isc Silicon PNP Power Transistor 2SA1227 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2987 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

 0.13. Size:184K  inchange semiconductor
 2sa1225.pdf

isc Silicon PNP Power Transistor 2SA1225 DESCRIPTION High transition frequency 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SC2983 APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

 0.14. Size:224K  inchange semiconductor
 2sa1227a.pdf

isc Silicon PNP Power Transistor 2SA1227A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2987A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 0.15. Size:214K  inchange semiconductor
 2sa1220 2sa1220a.pdf

isc Silicon PNP Power Transistors 2SA1220/A DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -120V(Min)-2SA1220 (BR)CEO = -160V(Min)-2SA1220A Complement to Type 2SC2690/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier High frequency power amplifier ABSOLU