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MBT2222ADW1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MBT2222ADW1
   Código: 1P*
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 75 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 8 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT363

 Búsqueda de reemplazo de transistor bipolar MBT2222ADW1

 

MBT2222ADW1 Datasheet (PDF)

 ..1. Size:139K  onsemi
mbt2222adw1 nsvbt2222adw1.pdf

MBT2222ADW1
MBT2222ADW1

MBT2222ADW1,NSVBT2222ADW1General Purpose TransistorNPN Siliconhttp://onsemi.comFeatures Moisture Sensitivity Level: 1 NSV Prefix for Automotive and Other Applications Requiring(3) (2) (1)Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableQ1 Q2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(4) (5) (6)MAXIM

 0.1. Size:160K  onsemi
mbt2222adw1t1g.pdf

MBT2222ADW1
MBT2222ADW1

MBT2222ADW1T1GGeneral Purpose TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value Unit Q1 Q2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 Vdc(4) (5) (6)Emitter-Base Voltage VEBO 6.0 VdcCollector Cur

 0.2. Size:164K  onsemi
mbt2222adw1t1.pdf

MBT2222ADW1
MBT2222ADW1

MBT2222ADW1T1GGeneral Purpose TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value Unit Q1 Q2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 Vdc(4) (5) (6)Emitter-Base Voltage VEBO 6.0 VdcCollector Cur

 0.3. Size:341K  willas
mmbt2222adw1t1.pdf

MBT2222ADW1
MBT2222ADW1

FM120-M MMBT2222ADW1T1WILLASTHRUDual General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to o

 0.4. Size:250K  lrc
lmbt2222adw1t1g.pdf

MBT2222ADW1
MBT2222ADW1

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-

 0.5. Size:250K  lrc
lmbt2222adw1t1g lmbt2222adw1t3g.pdf

MBT2222ADW1
MBT2222ADW1

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-

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