MBT2222ADW1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MBT2222ADW1
Código: 1P*
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 75 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 300 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT363
Búsqueda de reemplazo de transistor bipolar MBT2222ADW1
MBT2222ADW1 Datasheet (PDF)
mbt2222adw1 nsvbt2222adw1.pdf
MBT2222ADW1,NSVBT2222ADW1General Purpose TransistorNPN Siliconhttp://onsemi.comFeatures Moisture Sensitivity Level: 1 NSV Prefix for Automotive and Other Applications Requiring(3) (2) (1)Unique Site and Control Change Requirements; AEC-Q101Qualified and PPAP CapableQ1 Q2 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(4) (5) (6)MAXIM
mbt2222adw1t1g.pdf
MBT2222ADW1T1GGeneral Purpose TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value Unit Q1 Q2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 Vdc(4) (5) (6)Emitter-Base Voltage VEBO 6.0 VdcCollector Cur
mbt2222adw1t1.pdf
MBT2222ADW1T1GGeneral Purpose TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value Unit Q1 Q2Collector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 75 Vdc(4) (5) (6)Emitter-Base Voltage VEBO 6.0 VdcCollector Cur
mmbt2222adw1t1.pdf
FM120-M MMBT2222ADW1T1WILLASTHRUDual General Purpose TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to o
lmbt2222adw1t1g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-
lmbt2222adw1t1g lmbt2222adw1t3g.pdf
LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN SiliconLMBT2222ADW1T1GS-LMBT2222ADW1T1G We declare that material of product compliance with ROHS requirements. S- Prefix for Automotive and Other Applications Requiring65 Unique Site and Control Change Requirements;4AEC-Q101 Qualified and PPAP Capable.12MAXIMUM RATINGS3Rating Symbol Value UnitSC-
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