MBT6429DW1T1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MBT6429DW1T1G

Código: 1T*

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 55 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 500

Encapsulados: SOT363

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MBT6429DW1T1G datasheet

 ..1. Size:219K  onsemi
 mbt6429dw1t1g.pdf pdf_icon

MBT6429DW1T1G

MBT6429DW1T1G Amplifier Transistors NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant (3) (2) (1) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 45 Vdc (4) (5) (6) Collector-Base Voltage VCBO 55 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 200 mAdc THERMAL CHARACTE

 7.1. Size:300K  motorola
 mmbt6428 mmbt6429.pdf pdf_icon

MBT6429DW1T1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT6428LT1/D Amplifier Transistors MMBT6428LT1 COLLECTOR NPN Silicon MMBT6429LT1 3 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol 6428LT1 6429LT1 Unit 2 Collector Emitter Voltage VCEO 50 45 Vdc CASE 318 08, STYLE 6 Collector Base Voltage VCBO 60 55 Vdc SOT 23 (TO 236AB) Emitter Base Voltage VEBO

 7.2. Size:47K  philips
 pmbt6428 pmbt6429 3.pdf pdf_icon

MBT6429DW1T1G

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT6428; PMBT6429 NPN general purpose transistors 1999 Apr 27 Product specification Supersedes data of 1997 Apr 02 Philips Semiconductors Product specification NPN general purpose transistors PMBT6428; PMBT6429 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 base 2 emitter A

 7.3. Size:109K  philips
 pmbt6428 pmbt6429.pdf pdf_icon

MBT6429DW1T1G

DISCRETE SEMICONDUCTORS DATA SHEET PMBT6428; PMBT6429 NPN general purpose transistors Product data sheet 2004 Jan 22 Supersedes data of 1999 Apr 27 NXP Semiconductors Product data sheet NPN general purpose transistors PMBT6428; PMBT6429 FEATURES PINNING Low current (max. 100 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 base 2 emitter APPLICATIONS 3 collector Gen

MOSTRAR MÁS

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