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MBT6429DW1T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MBT6429DW1T1G
   Código: 1T*
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 55 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 500
   Paquete / Cubierta: SOT363
 

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MBT6429DW1T1G Datasheet (PDF)

 ..1. Size:219K  onsemi
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MBT6429DW1T1G

MBT6429DW1T1GAmplifier TransistorsNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliant(3) (2) (1)MAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 45 Vdc(4) (5) (6)Collector-Base Voltage VCBO 55 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 200 mAdcTHERMAL CHARACTE

 7.1. Size:300K  motorola
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MBT6429DW1T1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT6428LT1/DAmplifier TransistorsMMBT6428LT1COLLECTORNPN SiliconMMBT6429LT131BASE23EMITTERMAXIMUM RATINGS1Rating Symbol 6428LT1 6429LT1 Unit2CollectorEmitter Voltage VCEO 50 45 VdcCASE 31808, STYLE 6CollectorBase Voltage VCBO 60 55 VdcSOT23 (TO236AB)EmitterBase Voltage VEBO

 7.2. Size:47K  philips
pmbt6428 pmbt6429 3.pdf pdf_icon

MBT6429DW1T1G

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT6428; PMBT6429NPN general purpose transistors1999 Apr 27Product specificationSupersedes data of 1997 Apr 02Philips Semiconductors Product specificationNPN general purpose transistors PMBT6428; PMBT6429FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 base2 emitterA

 7.3. Size:109K  philips
pmbt6428 pmbt6429.pdf pdf_icon

MBT6429DW1T1G

DISCRETE SEMICONDUCTORS DATA SHEETPMBT6428; PMBT6429NPN general purpose transistorsProduct data sheet 2004 Jan 22Supersedes data of 1999 Apr 27NXP Semiconductors Product data sheetNPN general purpose transistors PMBT6428; PMBT6429FEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 50 V).1 base2 emitterAPPLICATIONS3 collector Gen

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