MJE350G Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJE350G
Código: JE350
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO225
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MJE350G datasheet
mje350g.pdf
MJE350G Plastic Medium-Power PNP Silicon Transistor This device is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. www.onsemi.com Features High Collector-Emitter Sustaining Voltage 0.5 AMPERE Excellent DC Current Gain POWER TRANSISTOR Complement to MJE340 PNP SILICON Thes
mje340 mje350.pdf
MJE340 MJE350 Complementary silicon power transistors Features STMicroelectronics preferred salestypes Complementary NPN - PNP devices Applications Linear and switching industrial equipment 3 2 1 Description SOT-32 The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. The complemen
mje340-mje350.pdf
MJE340 MJE350 COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The MJE340 is a silicon epitaxial planar NPN 1 2 transistor intended for use in medium power 3 linear and switching applications.It is mounted in SOT-32. The complementary PNP type is MJE350. S
Otros transistores... KSP44BU, KSP44TA, KSP44TF, KSP45TA, MBT2222ADW1, MBT3904DW2, MBT6429DW1T1G, MJ14001G, D667, MMBT5401LT3G, MMBT5401M3, MMBTA42LT, MMBTA43L, MMBTA93L, MMBTH10-04LT1G, MMJT350, MPSA42G
History: BC170A
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